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RFD16N06LESM Datasheet

  • RFD16N06LESM

  • 16A, 60V, 0.047 Ohm, Logic Level, N-Channel Power MOSFETs

  • 7頁

  • INTERSIL   INTERSIL

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RFD16N06LE, RFD16N06LESM
Data Sheet
October 1999
File Number
3628.3
16A, 60V, 0.047 Ohm, Logic Level,
N-Channel Power MOSFETs
These are N-Channel power MOSFETs manufactured using
a modern process. This process, which uses feature sizes
approaching those of LSI integrated circuits gives optimum
utilization of silicon, resulting in outstanding performance.
They were designed for use in applications such as
switching regulators, switching converters, motor drivers,
relay drivers and emitter switches for bipolar transistors. This
performance is accomplished through a special gate oxide
design which provides full rated conductance at gate bias in
the 3V to 5V range, thereby facilitating true on-off power
control directly from logic level (5V) integrated circuits.
Formerly developmental type TA49027.
Features
鈥?16A, 60V
鈥?r
DS(ON)
= 0.047鈩?/div>
鈥?Temperature Compensating PSPICE
廬
Model
鈥?Can be Driven Directly from CMOS, NMOS, TTL
Circuits
鈥?Peak Current vs Pulse Width Curve
鈥?UIS Rating Curve
鈥?Related Literature
- TB334 鈥淕uidelines for Soldering Surface Mount
Components to PC Boards鈥?/div>
Symbol
D
Ordering Information
PART NUMBER
RFD16N06LE
RFD16N06LESM
PACKAGE
TO-251AA
TO-252AA
BRAND
16N06L
16N06LE
G
NOTE: When ordering, use the entire part number. Add suffix 9A to
obtain the TO-252AA variant in the tape and reel, i.e.,
RFD16N06LESM9A.
S
Packaging
JEDEC TO-251AA
JEDEC TO-252AA
SOURCE
DRAIN
GATE
DRAIN (FLANGE)
GATE
SOURCE
DRAIN (FLANGE)
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
PSPICE廬 is a registered trademgark of MicroSim Corporation.
http://www.intersil.com or 407-727-9207
|
Copyright
漏
Intersil Corporation 1999

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