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RFD16N06LESM Datasheet

  • RFD16N06LESM

  • 16A, 60V, 0.047 Ohm, Logic Level, N-Channel Power MOSFETs

  • 7頁

  • FAIRCHILD

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RFD16N06LESM
Data Sheet
September 2002
16A, 60V, 0.047 Ohm, Logic Level,
N-Channel Power MOSFETs
These are N-Channel power MOSFETs manufactured using
a modern process. This process, which uses feature sizes
approaching those of LSI integrated circuits gives optimum
utilization of silicon, resulting in outstanding performance.
They were designed for use in applications such as
switching regulators, switching converters, motor drivers,
relay drivers and emitter switches for bipolar transistors. This
performance is accomplished through a special gate oxide
design which provides full rated conductance at gate bias in
the 3V to 5V range, thereby facilitating true on-off power
control directly from logic level (5V) integrated circuits.
Formerly developmental type TA49027.
Features
鈥?16A, 60V
鈥?r
DS(ON)
= 0.047鈩?/div>
鈥?Temperature Compensating PSPICE
廬
Model
鈥?Can be Driven Directly from CMOS, NMOS, TTL
Circuits
鈥?Peak Current vs Pulse Width Curve
鈥?UIS Rating Curve
鈥?Related Literature
- TB334 鈥淕uidelines for Soldering Surface Mount
Components to PC Boards鈥?/div>
Symbol
D
Ordering Information
PART NUMBER
RFD16N06LESM*
PACKAGE
TO-252AA
BRAND
16N06LE
G
NOTE: When ordering, use the entire part number. Add suffix 9A to
obtain the TO-252AA variant in the tape and reel, i.e.,
RFD16N06LESM9A.
*RFD16N06LESM is only availabe in tape and reel.
S
Packaging
JEDEC TO-252AA
DRAIN (FLANGE)
GATE
SOURCE
漏2002 Fairchild Semiconductor Corporation
RFD16N06LESM Rev. B1

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