RFD16N05SM Datasheet

IC型號：
RFD16N05SM
PDF描述：
16A, 50V, 0.047 Ohm, N-Channel Power MOSFETs
文件大?。?/label>
95.03KB
PDF頁數(shù)：
8頁
芯片廠家：
INTERSIL

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RFD16N05, RFD16N05SM

Data Sheet

July 1999

File Number

2267.5

16A, 50V, 0.047 Ohm, N-Channel Power

MOSFETs

The RFD16N05 and RFD16N05SM N-channel power

MOSFETs are manufactured using the MegaFET process.

This process, which uses feature sizes approaching those of

LSI integrated circuits, gives optimum utilization of silicon,

resulting in outstanding performance. They were designed

for use in applications such as switching regulators,

switching converters, motor drivers, and relay drivers. These

transistors can be operated directly from integrated circuits.

Formerly developmental type TA09771.

Features

鈥?16A, 50V

鈥?r

DS(ON)

= 0.047鈩?/div>

鈥?Temperature Compensating PSPICE

廬

Model

鈥?Peak Current vs Pulse Width Curve

鈥?UIS Rating Curve

鈥?175

C Operating Temperature

鈥?Related Literature

- TB334 鈥淕uidelines for Soldering Surface Mount

Components to PC Boards鈥?/div>

Ordering Information

PART NUMBER

RFD16N05

RFD16N05SM

PACKAGE

TO-251AA

TO-252AA

BRAND

F16N05

Symbol

NOTE: When ordering, use the entire part number. Add the suffix 9A to

obtain the TO-252AA variant in the tape and reel, i.e., RFD16N05SM9A.

Packaging

JEDEC TO-251AA

SOURCE

DRAIN

GATE

SOURCE

JEDEC TO-252AA

DRAIN (FLANGE)

4-420

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

PSPICE廬 is a registered trademark of MicroSim Corporation.

http://www.intersil.com or 407-727-9207

漏

Intersil Corporation 1999

標(biāo)準(zhǔn)包裝
75
類別
分離式半導(dǎo)體產(chǎn)品
家庭
FET - 單
系列
-
FET 型
MOSFET N 通道，金屬氧化物
FET 特點(diǎn)
標(biāo)準(zhǔn)型
漏極至源極電壓(Vdss)
50V
電流 - 連續(xù)漏極(Id) @ 25° C
16A
開態(tài)Rds（最大）@ Id, Vgs @ 25° C
47 毫歐 @ 16A，10V
Id 時(shí)的 Vgs(th)（最大）
4V @ 250µA
閘電荷(Qg) @ Vgs
80nC @ 20V
輸入電容 (Ciss) @ Vds
900pF @ 25V
功率 - 最大
72W
安裝類型
表面貼裝
封裝/外殼
TO-252-3，DPak（2 引線+接片），SC-63
供應(yīng)商設(shè)備封裝
TO-252AA
包裝
管件

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