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RFD14N06LSM Datasheet

  • RFD14N06LSM

  • 14A, 60V, 0.100 Ohm, Logic Level, N-Channel Power MOSFETs

  • 8頁

  • INTERSIL   INTERSIL

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RFD14N06L, RFD14N06LSM, RFP14N06L
Data Sheet
July 1999
File Number
4088.3
14A, 60V, 0.100 Ohm, Logic Level,
N-Channel Power MOSFETs
These are N-Channel power MOSFETs manufactured using
the MegaFET process. This process, which uses feature
sizes approaching those of LSI integrated circuits, gives
optimum utilization of silicon, resulting in outstanding
performance. They were designed for use in applications
such as switching regulators, switching converters, motor
drivers and relay drivers. This performance is accomplished
through a special gate oxide design which provides full rated
conductance at gate bias in the 3V - 5V range, thereby
facilitating true on-off power control directly from logic level
(5V) integrated circuits.
Formerly developmental type TA09870.
Features
鈥?14A, 60V
鈥?r
DS(ON)
= 0.100鈩?/div>
鈥?Temperature Compensating PSPICE
廬
Model
鈥?Can be Driven Directly from CMOS, NMOS, and TTL
Circuits
鈥?Peak Current vs Pulse Width Curve
鈥?UIS Rating Curve
鈥?175
o
C Operating Temperature
鈥?Related Literature
- TB334 鈥淕uidelines for Soldering Surface Mount
Components to PC Boards鈥?/div>
Ordering Information
PART NUMBER
RFD14N06L
RFD14N06LSM
RFP14N06L
PACKAGE
TO-251AA
TO-252AA
TO-220AB
BRAND
14N06L
14N06L
FP14N06L
Symbol
D
G
NOTE: When ordering, use the entire part number. Add the suffix 9A, to
obtain the TO-252AA variant in tape and reel, i.e. RFD14N06LSM9A.
S
Packaging
JEDEC TO-251AA
SOURCE
DRAIN
GATE
GATE
SOURCE
JEDEC TO-252AA
DRAIN (FLANGE)
DRAIN (FLANGE)
JEDEC TO-220AB
SOURCE
DRAIN
GATE
DRAIN (FLANGE)
6-1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
PSPICE廬 is a registered trademark of MicroSim Corporation.
http://www.intersil.com or 407-727-9207
|
Copyright
漏
Intersil Corporation 1999

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