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RFD10P03L Datasheet

  • RFD10P03L

  • 10A, 30V, 0.200W, Logic Level P-Channel Power MOSFET

  • 275.88KB

  • 12頁(yè)

  • FAIRCHILD

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S E M I C O N D U C T O R
RFD10P03L, RFD10P03LSM,
RFP10P03L
10A, 30V, 0.200鈩? Logic Level
P-Channel Power MOSFET
Description
These products are P-Channel power MOSFETs manufac-
tured using the MegaFET process. This process, which uses
feature sizes approaching those of LSI circuits, gives opti-
mum utilization of silicon, resulting in outstanding perfor-
mance. They were designed for use in applications such as
switching regulators, switching converters, motor drivers,
and relay drivers. These transistors can be operated directly
from integrated circuits.
May 1997
Features
鈥?10A, 30V
鈥?r
DS(ON)
= 0.200鈩?/div>
鈥?/div>
Temperature Compensating
PSPICE Model
鈥?PSPICE Thermal Model
鈥?Peak Current vs Pulse Width Curve
鈥?UIS Rating Curve
鈥?175
o
C Operating Temperature
Symbol
Ordering Information
PART NUMBER
RFD10P03L
RFD10P03LSM
RFP10P03L
PACKAGE
TO-251AA
TO-252AA
TO-220AB
BRAND
10P03L
10P03L
F10P03L
G
D
S
NOTE: When ordering, use the entire part number. Add the suf鏗亁, 9A,
to obtain the
TO-252AA
variant in tape and reel, i.e.
RFD10P03LSM9A..
Formerly developmental type TA49205.
Packaging
JEDEC TO-220AB
SOURCE
DRAIN
GATE
DRAIN (FLANGE)
DRAIN (FLANGE)
JEDEC TO-251AA
SOURCE
DRAIN
GATE
JEDEC TO-252AA
DRAIN (FLANGE)
GATE
SOURCE
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright
漏
Harris Corporation 1997
File Number
3515.1
1

RFD10P03L 產(chǎn)品屬性

  • Fairchild Semiconductor

  • P-Channel

  • - 30 V

  • +/- 10 V

  • 10 A

  • 0.2 Ohms

  • Single

  • + 175 C

  • Through Hole

  • TO-220AB

  • 20 ns

  • - 55 C

  • 65 W

  • 50 ns

  • 35 ns

RFD10P03L相關(guān)型號(hào)PDF文件下載

  • 型號(hào)
    版本
    描述
    廠商
    下載
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    10A, 30V, 0.200W, Logic Level P-Channel Power MOSFET
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