Preliminary
RF3160
DUAL-BAND GSM/DCS
POWER AMP MODULE
2
Typical Applications
鈥?3V Dual-Band GSM/DCS Handsets
鈥?Commercial and Consumer Systems
鈥?Portable Battery-Powered Equipment
鈥?GPRS Compatible
鈥?GSM, E-GSM and DCS Products
2
POWER AMPLIFIERS
Product Description
The RF3160 is a high-power, high-efficiency power ampli-
fier module. The device is self-contained with 50鈩?input
and output terminals. The device is manufactured on an
advanced Gallium Arsenide Heterojunction Bipolar Tran-
sistor (HBT) process, and has been designed for use as
the final RF amplifier in GSM/DCS handheld digital cellu-
lar equipment and other applications in the 880MHz to
915MHz and 1710MHz to 1785MHz bands. On-board
power control provides over 70dB of control range with an
analog voltage input, and provides power down with a
logic "low" for standby operation. The device is packaged
in an ultra-small (9mmx11mm) LCC, minimizing the
required board space.
1.910
TYP
7.040
1
1.40
1.25
0.450
鹵0.075
0.760
TYP
4.520
9.09
鹵0.10
FULL
RADIUS
TYP
R0.860
TYP
Side View
Dimensions in mm.
All contact points are gold-plated,
lead-free surfaces.
11.61
鹵 0.10
0.920
TYP
NOTES:
Bottom View
1. Shaded area is pin 1.
2. All dimensions without specific tolerances are for reference only.
Optimum Technology Matching廬 Applied
Si BJT
Si Bi-CMOS
眉
GaAs HBT
SiGe HBT
BAND SELECT
Package Style: Module (9mm x11mm)
眉
Si CMOS
V
APC
GaAs MESFET
Features
鈥?Single 2.8V to 5.0V Supply Voltage
鈥?+35.0dBm GSM Output Power at 3.2V
鈥?+32.5dBm DCS Output Power at 3.2V
13 GND
12 DCS OUT
11 GND
10 GSM OUT
9 GND
16
GND 1
DCS IN 2
GND 3
GSM IN 4
GND 5
6
VCC
15
GND
14
鈥?55% GSM and 50% DCS Efficiency
鈥?Internal Band Select
Ordering Information
RF3160
RF3160 PCBA
Dual-Band GSM/DCS Power Amp Module
Fully Assembled Evaluation Board
7
GND
8
VCC
Functional Block Diagram
RF Micro Devices, Inc.
7625 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Rev A4 010420
2-261
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