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RF2132

0

RoHS Compliant & Pb-Free Product

Typical Applications

鈥?4.8V AMPS Cellular Handsets

鈥?4.8V CDMA/AMPS Handsets

鈥?4.8V JCDMA/TACS Handsets

Product Description

The RF2132 is a high power, high efficiency linear ampli-

fier IC. The device is manufactured on an advanced Gal-

lium Arsenide Heterojunction Bipolar Transistor (HBT)

process, and has been designed for use as the final RF

amplifier in dual-mode 4-cell CDMA/AMPS handheld digi-

tal cellular equipment, spread-spectrum systems, and

other applications in the 800MHz to 950MHz band. The

device is self-contained with 50惟 input and the output

can be easily matched to obtain optimum power, effi-

ciency, and linearity characteristics over varying supply

and control voltages.

-A-

0.158

0.150

0.021

0.014

0.009

0.004

LINEAR POWER AMPLIFIER

鈥?Driver Amplifier in Cellular Base Stations

鈥?Portable Battery-Powered Equipment

0.392

0.386

0.069

0.064

0.050

0.244

0.230

8擄 MAX

0擄 MIN

0.010

0.008

0.060

0.054

0.035

0.016

Optimum Technology Matching廬 Applied

Si BJT

Si Bi-CMOS

InGaP/HBT

GaAs HBT

SiGe HBT

GaN HEMT

GaAs MESFET

Si CMOS

SiGe Bi-CMOS

Package Style: Standard Batwing

Features

鈥?Single 4.2V to 5.0V Supply

鈥?Up to 29 dBm Linear Output Power

VCC 1

NC 2

RF IN 3

GND 4

GND 5

GND 6

GND 7

PC 8

16 GND

15 RF OUT

14 RF OUT

13 GND

12 GND

11 RF OUT

10 RF OUT

9 GND

鈥?29dB Gain With Analog Gain Control

鈥?45% Linear Efficiency

鈥?On-board Power Down Mode

鈥?800MHz to 950MHz Operation

BIAS

Ordering Information

RF2132

Linear Power Amplifier

RF2132PCBA-41X Fully Assembled Evaluation Board

Functional Block Diagram

RF Micro Devices, Inc.

7628 Thorndike Road

Greensboro, NC 27409, USA

Tel (336) 664 1233

Fax (336) 664 0454

http://www.rfmd.com

Rev B10 060908

2-109

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