RF2125P
2
Typical Applications
鈥?PCS Communication Systems
鈥?Digital Communication Systems
鈥?DECT Cordless Applications
鈥?Commercial and Consumer Systems
鈥?Portable Battery-Powered Equipment
HIGH POWER LINEAR AMPLIFIER
2
POWER AMPLIFIERS
Product Description
The RF2125P is a high power, high efficiency linear
amplifier IC. The device is manufactured on an advanced
Gallium Arsenide Heterojunction Bipolar Transistor (HBT)
process and has been designed for use as the final RF
amplifier in digital PCS phone transmitters and base sta-
tions requiring linear amplification operating between
1500MHz and 2200MHz. It will also function as a high
efficiency amplifier for constant envelope applications
such as DECT. The device is packaged in an 8-lead plas-
tic package with a backside ground. The device is self-
contained with the exception of the output matching net-
work and power supply feed line. It produces a typical
output power level of 1W.
3.90
鹵 0.10
-A-
0.43
鹵 0.05
0.05
鹵 0.05
Exposed
Heat Sink
4.90
鹵 0.10
1.27
6.00
鹵 0.20
Dimensions in mm.
8擄 MAX
0擄 MIN
0.60
鹵 0.15
0.22
鹵 0.03
1.40
鹵 0.10
2.70
鹵 0.10
1.70
鹵 0.10
NOTES:
1. Shaded lead is pin 1.
2. Lead coplanarity - 0.10 with respect to datum "A".
Optimum Technology Matching廬 Applied
Si BJT
Si Bi-CMOS
眉
GaAs HBT
SiGe HBT
Package Style: SOIC-8 Slug
GaAs MESFET
Si CMOS
Features
鈥?Single 2.7V to 7.5V Supply
鈥?1W Output Power
鈥?14dB Gain
鈥?45% Efficiency
鈥?Power Down Mode
鈥?1500MHz to 2200MHz Operation
RF IN 1
RF IN 2
PC 3
VCC 4
PACKAGE BASE
GND
8 RF OUT
7 RF OUT
6 RF OUT
5 RF OUT
BIAS
CIRCUIT
Ordering Information
RF2125P
RF2125P PCBA
High Power Linear Amplifier
Fully Assembled Evaluation Board
Functional Block Diagram
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Rev A4 010720
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