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Preliminary

RF2119

HIGH EFFICIENCY 2V POWER AMPLIFIER

2

Typical Applications

鈥?Two-Way Pagers

鈥?915MHz ISM Band Equipment

鈥?Spread-Spectrum Systems

鈥?3V AMPS/ETACS Cellular Handsets

鈥?CDPD Portable Data Cards

鈥?Personal Digital Cellular

2

POWER AMPLIFIERS

Product Description

The RF2119 is a high-power, high-efficiency amplifier IC

targeting 2V to 4V handheld systems. The device is man-

ufactured on an advanced Gallium Arsenide Heterojunc-

tion Bipolar Transistor (HBT) process, and has been

designed for use as the final RF amplifier in hand-held

digital cellular equipment, spread spectrum systems, and

other applications in the 800MHz to 960MHz band. The

device is well suited for either CW or pulsed applications.

At 3V, the RF2119 can deliver 29.5dBm of linear output

power. The device is self-contained with 50鈩?input and

the output can be easily matched to obtain optimum

power, efficiency, and linearity characteristics. The pack-

age is a PSSOP-16 with backside ground.

-A-

3.90

鹵 0.10

0.25 鹵 0.05

0.05 鹵 0.05 3

Exposed

3

Heat Sink

4.90 鹵 0.10

0.635

2.70 鹵 0.10

6.00 鹵 0.20

1.40 鹵 0.10

1.70 鹵 0.10

8擄 MAX

0擄 MIN

0.60 鹵 0.15

0.24

0.20

Optimum Technology Matching廬 Applied

Si BJT

Si Bi-CMOS

眉

GaAs HBT

SiGe HBT

Package Style: PSSOP-16

GaAs MESFET

Si CMOS

Features

鈥?Single 2V to 5V Supply

鈥?30dBm Output Power at 2.5V

鈥?30dB Small Signal Gain

鈥?53% Efficiency

鈥?On-board Power Down Mode

鈥?800MHz to 960MHz Operation

GND 1

LMATCH 2

GND 3

VCC 4

GND1 5

RF IN 6

GND 7

BIAS1 8

BIAS

CIRCUITS

PACKAGE BASE

GND

16 BIAS2

15 NC

14 RF OUT

13 RF OUT

12 RF OUT

11 NC

10 NC

9 VPC

Ordering Information

RF2119

RF2119 PCBA

High Efficiency 2V Power Amplifier

Fully Assembled Evaluation Board

Functional Block Diagram

RF Micro Devices, Inc.

7628 Thorndike Road

Greensboro, NC 27409, USA

Tel (336) 664 1233

Fax (336) 664 0454

http://www.rfmd.com

Rev A8 010720

2-55

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