NS
ESIG
WD
R NE O DUCT
R
D FO
NDE ITUTE P
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ST
OM
R E C LE S B
Data
I
Sheet
U F540N
January 2002
NOT SS B
IR
PO
IRF540, RF1S540SM
28A, 100V, 0.077 Ohm, N-Channel Power
MOSFETs
These are N-Channel enhancement mode silicon gate
power field effect transistors. They are advanced power
MOSFETs designed, tested, and guaranteed to withstand a
specified level of energy in the breakdown avalanche mode
of operation. All of these power MOSFETs are designed for
applications such as switching regulators, switching
convertors, motor drivers, relay drivers, and drivers for high
power bipolar switching transistors requiring high speed and
low gate drive power. These types can be operated directly
from integrated circuits.
Formerly developmental type TA17421.
Features
鈥?28A, 100V
鈥?r
DS(ON)
= 0.077鈩?/div>
鈥?Single Pulse Avalanche Energy Rated
鈥?Nanosecond Switching Speeds
鈥?Linear Transfer Characteristics
鈥?High Input Impedance
鈥?Related Literature
- TB334 鈥淕uidelines for Soldering Surface Mount
Components to PC Boards鈥?/div>
Symbol
D
Ordering Information
PART NUMBER
IRF540
RF1S540SM
PACKAGE
TO-220AB
TO-263AB
BRAND
IRF540
G
RF1S540SM
S
NOTE: When ordering, use the entire part number. Add the suffix 9A to
obtain the TO-263AB variant in the tape and reel, i.e., RF1S540SM9A.
Packaging
JEDEC TO-220AB
SOURCE
DRAIN
GATE
DRAIN (FLANGE)
JEDEC TO-263AB
GATE
SOURCE
DRAIN
(FLANGE)
漏2002 Fairchild Semiconductor Corporation
IRF540, RF1S540SM Rev. B
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