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MITSUBISHI RF POWER MOS FET

ELECTROSTATIC SENSITIVE DEVICE

OBSERVE HANDLING PRECAUTIONS

RD02MUS1

0.2+/-0.05

(0.22)

(0.22)

(0.25)

RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W

DESCRIPTION

RD02MUS1 is a MOS FET type transistor

specifically designed for VHF/UHF RF po

-wer amplifiers applications.

OUTLINE

DRAWING

4.6+/-0.05

3.3+/-0.05

0.8+/-0.05

6.0+/-0.15

1

4.9+/-0.15

1.0+/-0.05

FEATURES

High power gain:

Pout>2W, Gp>16dB

@Vdd=7.2V,f=175MHz,520MHz

High Efficiency:65%typ.(175MHz)

High Efficiency:65%typ.(520MHz)

2

3

(0.25)

INDEX MARK

(Gate)

0.2+/-0.05

For output stage of high power amplifiers

In VHF/UHF band mobile radio sets.

0.9+/-0.1

APPLICATION

Terminal No.

1.Drain (output)

2.Source (GND)

3.Gate (input)

Note

( ):center value

UNIT:mm

RoHS COMPLIANT

RD02MUS1-101,T112 is a RoHS compliant products.

RoHS compliance is indicate by the letter 鈥淕鈥?after the Lot Marking.

This product include the lead in high melting temperature type solders.

How ever,it applicable to the following exceptions of RoHS Directions.

1.Lead in high melting temperature type solders(i.e.tin-lead solder alloys containing more than85% lead.)

RD02MUS1

MITSUBISHI ELECTRIC

1/9

10 Jan 2006

3.5+/-0.05

2.0+/-0.05

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RD02MUS1 PDF文件相關(guān)型號

RD02MUS1相關(guān)型號PDF文件下載

• 型號
  版本
  描述
  廠商
  下載
• RD02MUS1
  英文版
  TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | LLCC
  ETC
  RD02MUS1
• RD02MUS1
  英文版
  RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MH...
  
  RD02MUS1
• RD02MUS2
  英文版
  RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MH...
  
  RD02MUS2
• RD02MUS1B
  英文版
  Silicon MOSFET Power Transistor 175MHz,520MHz,2W
  
  RD02MUS1B

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