Numonyx鈩?Wireless Flash Memory (W18)
Datasheet
Product Features
High Performance Read-While-Write/Erase
鈥?Burst frequency at 66 MHz
(zero wait states)
鈥?60 ns Initial access read speed
鈥?11 ns Burst mode read speed
鈥?20 ns Page mode read speed
鈥?4-, 8-, 16-, and Continuous-Word Burst
mode reads
鈥?Burst and Page mode reads in all Blocks,
across all partition boundaries
鈥?Burst Suspend feature
鈥?Enhanced Factory Programming at 3.1 碌s/
word
Security
鈥?128-Bit OTP Protection Register:
64 unique pre-programmed bits +
64 user-programmable bits
鈥?Absolute Write Protection with V
PP
at ground
鈥?Individual and Instantaneous Block Locking/
Unlocking with Lock-Down Capability
Quality and Reliability
鈥?Temperature Range: 鈥?0 擄C to +85 擄C
鈥?100K Erase Cycles per Block
鈥?90 nm ETOX鈩?IX Process
鈥?130 nm ETOX鈩?VIII Process
Architecture
鈥?Multiple 4-Mbit partitions
鈥?Dual Operation: RWW or RWE
鈥?Parameter block size = 4-Kword
鈥?Main block size = 32-Kword
鈥?Top or bottom parameter devices
鈥?16-bit
wide
data bus
Software
鈥?5 碌s (typ.) Program and Erase Suspend
latency time
鈥?Flash Data Integrator (FDI) and Common
Flash Interface (CFI) Compatible
鈥?Programmable WAIT signal polarity
Packaging and Power
鈥?90 nm: 32- and 64-Mbit in VF BGA
鈥?130 nm: 32-, 64-, and 128-Mbit in VF BGA
鈥?130 nm: 128-Mbit in QUAD+ package
鈥?56 Active Ball Matrix, 0.75 mm Ball-Pitch
鈥?V
CC
= 1.70 V to 1.95 V
鈥?V
CCQ
(90 nm) = 1.7 V to 1.95 V
鈥?V
CCQ
(130 nm) = 1.7 V to 2.24 V or 1.35 V
to 1.80 V
鈥?V
CCQ
(130 nm) = 1.35 V to 2.24 V
鈥?Standby current (130 nm): 8 碌A(chǔ) (typ.)
鈥?Read current: 8 mA (4-word burst, typ.)
Order Number: 290701-18
November 2007