RB495D
Diodes
Schottky barrier diode
RB495D
!
Applications
Low current rectification
!
External dimensions
(Units : mm)
2.9鹵0.2
1.9鹵0.2
+0.2
鈭?.1
0.8鹵0.1
1.1
1.6
0.4
(All leads have same dimensions)
!
Construction
Silicon epitaxial planar
ROHM : SMD3
EIAJ : SC-59
JEDEC : SOT-346
!
Circuit
!
Absolute maximum ratings
(Ta = 25擄C)
Parameter
Peak reverse voltage
DC reverse voltege
Mean rectifying current
鈭?
Peak forward surge current
鈭?
Junction temperature
Storage temperature
Operating temperture
鈭?
Mean output current per element : I
O
/ 2
鈭?
60Hz for 1
Symbol
V
RM
V
R
I
O
I
FSM
Tj
Tstg
Topr
Limits
40
25
0.4
2
125
Unit
V
V
A
A
擄C
擄C
擄C
鈭?0~+125
鈭?0~+85
!
Electrical characteristics
(Ta = 25擄C)
Parameter
Forward voltage
Reverse current
Symbol
V
F1
V
F2
I
R
Min.
鈭?/div>
鈭?/div>
鈭?/div>
Typ.
鈭?/div>
鈭?/div>
鈭?/div>
Max.
0.30
0.50
70
Unit
V
V
碌A(chǔ)
I
F
=10mA
I
F
=200mA
V
R
=25V
Conditions
Note) ESD sensiteve product handling required.
0.3~0.6
D3Q
!
Features
1) Small surface mounting type. (SMD3)
2) Two diodes with common cathode for excellent
installation efficiency.
3) High reliability.
0.95 0.95
+0.2
鈭?.1
2.8鹵0.2
0~0.1
+0.1
鈭?.05
+0.1
0.15
鈭?.06
RB495相關(guān)型號(hào)PDF文件下載
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