RB411D
Diodes
Schottky barrier diode
RB411D
!
Applications
Low power rectification
For switching power supply
!
External dimensions
(Units : mm)
2.9
鹵
0.2
1.9
鹵
0.2
0.95 0.95
1.1
+0.2
鈭?.1
0.8
鹵
0.1
(All leads have the same dimensions)
!
Construction
Silicon epitaxial planar
ROHM : SMD3
EIAJ : SC-59
JEDEC : SOT-346
!
Circuit
!
Absolute maximum ratings
(Ta = 25擄C)
Parameter
Peak reverse voltage
DC reverse voltage
Mean rectifying current
Peak forward surge current
鈭?/div>
Junction temperature
Storage temperature
鈭?/div>
60Hz for 1
Symbol
V
RM
V
R
I
O
I
FSM
T
j
T
stg
Limits
40
20
0.5
3
125
鈭?0
~
+125
Unit
V
V
A
A
擄C
擄C
!
Electrical characteristics
(Ta = 25擄C)
Parameter
Forward voltage
Forward voltage
Reverse current
Capacitance between terminals
Note) sensitive product handling required.
Symbol
V
F1
V
F2
I
R
C
T
Min.
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
Typ.
鈭?/div>
鈭?/div>
鈭?/div>
20
Max.
0.3
0.5
30
鈭?/div>
Unit
V
V
碌A(chǔ)
pF
I
F
=10mA
I
F
=500mA
V
R
=10V
Conditions
V
R
=10V,
f=1MHz
0.3~0.6
D3E
!
Features
1) Small surface mounting type. (SMD3)
2) Low V
F
. (V
F
=0.43V Typ. at 0.5A)
3) High reliability.
1.6
+0.2
鈭?.1
2.8
鹵
0.2
0~0.1
+0.1
0.4
鈭?.05
+0.1
0.15
鈭?.06
RB411相關(guān)型號(hào)PDF文件下載
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