D A T A S H E E T
Imaging
Imaging Product Line
RA1133J Full Frame CCD Image Sensor
24 碌m square pitch, 1100 x 330 pixel configuration
Description
The RA1133J is a full frame CCD
sensor with reset capabilities designed
specifically for use in spectroscopy,
biomedical imaging and related scientific
imaging applications. The package for
the array is designed with an integrated
two stage thermoelectric cooler. This
enables the device to be run 40擄 C
below ambient temperature, -15擄 C
when compared to room temperature.
Its combination of very low noise and
low dark current make it ideal for low
light, high dynamic range and high
resolution applications.
MPP Operation
A major source of dark current in
devices such as this originates in
surface states at the Si-SiO2 interface.
A unigue design and process enables
the RA1133J to be run in "multi-pinned
phase" or MPP mode of operation.
This helps eliminate dark current
generation in the interface surface
states. By holding the vertical clocks
at negative potential during integration
and horizontal signal readout, the
surface will not be depleted and the
surface state will not generate dark
current.
Features
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363,000 picture elements (pixels) in
a 1100 x 330 configuration
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24 碌m square pixels
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2-phase buried channel process
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On-chip amplifier for low noise and
high speed readout
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Dynamic range greater than 25,000:1
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On-chip temperature sensor
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Two stage TE cooler integrated into
the package
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Hermetically sealed
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100% fill factor
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10 MHz data rate
The imager is structured with a single
output register at one end of the imaging
columns. A lateral reset drain is located
adjacent to this readout register which
enables the dumping of accumulated
charge from the array. Two phase clocks
are needed to drive the readout register.
Three phase clocks are needed to drive
imaging cells. The array is available in
a 30-pin metal package with an integrated
TE cooler as shown in Figure 1. Package
dimensions are shown in Figure 8.
Caution: While the RA1133J imagers have been
designed to resist electrostatic discharge (ESD),
they can be damaged from such discharges.
Always observe proper ESD precautions when
handling and storing these sensors.
www.perkinelmer.com/opto
DSP-303.01C- 8/2002W Page 1
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TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | TO-236VAR
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英文版
TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | TO-92VAR
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泰豐
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英文版
TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | TO-236
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TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | TO-236VAR
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TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | TO-92VAR
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英文版
TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | TO-236
ETC
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英文版
TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | TO-236VAR
ETC
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英文版
TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | TO-92VAR
ETC
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