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RA07M1317M-01 Datasheet

  • RA07M1317M-01

  • 135-175MHz 6.5W 7.2V, 2 Stage Amp. For PORTABLE RADIO

  • 9頁

  • MITSUBISHI   MITSUBISHI

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MITSUBISHI RF MOSFET MODULE
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RA07M1317M
BLOCK DIAGRAM
2
3
135-175MHz 6.5W 7.2V, 2 Stage Amp. For PORTABLE RADIO
DESCRIPTION
The RA07M1317M is a 6.5-watt RF MOSFET Amplifier Module
for 7.2-volt mobile radios that operate in the 135- to 175-MHz range.
The battery can be connected directly to the drain of the
enhancement-mode MOSFET transistors. Without the gate
voltage (V
GG
=0V), only a small leakage current flows into the drain
and the RF input signal attenuates up to 60 dB. The output power
and drain current increase as the gate voltage increases. With a
gate voltage around 2.5V (minimum), output power and drain
current increases substantially. The nominal output power
becomes available at 3V (typical) and 3.5V (maximum). At
V
GG
=3.5V, the typical gate current is 1 mA.
This module is designed for non-linear FM modulation, but may
also be used for linear modulation by setting the drain quiescent
current with the gate voltage and controlling the output power with
the input power.
FEATURES
鈥?Enhancement-Mode MOSFET Transistors
(I
DD
鈮?
@ V
DD
=7.2V, V
GG
=0V)
鈥?P
out
>6.5W @ V
DD
=7.2V, V
GG
=3.5V, P
in
=20mW
鈥?/div>
畏
T
>45% @ P
out
=6W (V
GG
control), V
DD
=7.2V, P
in
=20mW
鈥?Broadband Frequency Range: 135-175MHz
鈥?Low-Power Control Current I
GG
=1mA (typ) at V
GG
=3.5V
鈥?Module Size: 30 x 10 x 5.4 mm
鈥?Linear operation is possible by setting the quiescent drain current
with the gate voltage and controlling the output power with the
input power
1
4
5
1
2
3
4
5
RF Input (P
in
)
Gate Voltage (V
GG
), Power Control
Drain Voltage (V
DD
), Battery
RF Output (P
out
)
RF Ground (Case)
PACKAGE CODE: H46S
ORDERING INFORMATION:
ORDER NUMBER
RA07M1317M-E01
RA07M1317M-01
(Japan - packed without desiccator)
SUPPLY FORM
Antistatic tray,
25 modules/tray
RA07M1317M
MITSUBISHI ELECTRIC
1/9
25 April 2003

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