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R1WV3216RBG-8S Datasheet

  • R1WV3216RBG-8S

  • 32Mb superSRAM (2M wordx16bit)

  • 16頁

  • RENESAS

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R1W V3216R Series
32Mb superSRAM (2M wordx16bit)
REJ03C0215-0100Z
Rev.1.00
2004.4.13
Description
The R1WV3216R Series is a family of low voltage 32-Mbit static RAMs organized as 2097152-words by 16-bit,
fabricated by Renesas's high-performance 0.15um CMOS and TFT technologies.
The R1WV3216R Series is suitable for memory applications where a simple interfacing , battery operating and
battery backup are the important design objectives.
The R1WV3216R Series is made by stacked-micro-package technology and two chips of 16Mbit superSRAMs
are assembled in one package.
The R1WV3216R Series is packaged in a 52pin micro thin small outline mount device[
碌
TSOP / 10.79mm x
10.49mm with the pin-pitch of 0.4mm] or a 48balls fine pitch ball grid array [f-BGA / 7.5mmx8.5mm with the ball-pitch
of 0.75mm and 6x8 array] . It gives the best solution for a compaction of mounting area as well as flexibility of wiring
pattern of printed circuit boards.
Features
鈥?Single 2.7-3.6V power supply
鈥?Small stand-by current:4
碌
A (3.0V, typ.)
鈥?Data retention supply voltage =2.0V
鈥?No clocks, No refresh
鈥?All inputs and outputs are TTL compatible.
鈥?Easy memory expansion by CS1#, CS2, LB# and UB#
鈥?Common Data I/O
鈥?Three-state outputs: OR-tie capability
鈥?OE# prevents data contention on the I/O bus
鈥?Process technology: 0.15um CMOS
Rev.1.00
2004.4.13
page 1 of 16

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