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R1LV0416DBG-7LI Datasheet

  • R1LV0416DBG-7LI

  • 4M SRAM (256-kword 】 16-bit)

  • 17頁

  • RENESAS

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R1LV0416D Series
4M SRAM (256-kword
脳
16-bit)
REJ03C0311-0100
Rev.1.00
May.24.2007
Description
The R1LV0416D is a 4-Mbit static RAM organized 256-kword
脳
16-bit, fabricated by Renesas's high-performance 0.15碌m
CMOS and TFT technologies. R1LV0416D Series has realized higher density, higher performance and low power
consumption. The R1LV0416D Series offers low power standby power dissipation; therefore, it is suitable for battery
backup systems. The R1LV0416D Series is packaged in a 44-pin thin small outline mount device, or a 48-ball fine pitch
ball grid array.
Features
鈥?/div>
Single 3.0 V supply: 2.7 V to 3.6 V
鈥?/div>
Fast access time: 55/70 ns (max)
鈥?/div>
Power dissipation:
錚?/div>
Standby: 3
碌W
(typ) (V
CC
= 3.0 V)
鈥?/div>
Equal access and cycle times
鈥?/div>
Common data input and output.
錚?/div>
Three state output
鈥?/div>
Battery backup operation.
錚?/div>
2 chip selection for battery backup
鈥?/div>
Temperature Range: -40 to +85擄C
Rev.1.00, May.24.2007, page 1 of 15

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