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R1LV0416CSB-5SI Datasheet

  • R1LV0416CSB-5SI

  • Wide Temperature Range Version 4M SRAM (256-kword 】 16-bit)

  • 18頁

  • RENESAS

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R1LV0416C-I Series
Wide Temperature Range Version
4M SRAM (256-kword
脳
16-bit)
REJ03C0105-0200Z
Rev. 2.00
May.26.2004
Description
The R1LV0416C-I is a 4-Mbit static RAM organized 256-kword
脳
16-bit. R1LV0416C-I Series has
realized higher density, higher performance and low power consumption by employing CMOS process
technology (6-transistor memory cell). The R1LV0416C-I Series offers low power standby power
dissipation; therefore, it is suitable for battery backup systems. It has packaged in 44-pin TSOP II.
Features
鈥?/div>
Single 2.5 V and 3.0 V supply: 2.2 V to 3.6 V
鈥?/div>
Fast access time: 55/70 ns (max)
鈥?/div>
Power dissipation:
錚?/div>
Active: 5.0 mW/MHz (typ)(V
CC
= 2.5 V)
: 6.0 mW/MHz (typ) (V
CC
= 3.0 V)
錚?/div>
Standby: 1.25
碌W
(typ) (V
CC
= 2.5 V)
: 1.5
碌W
(typ) (V
CC
= 3.0 V)
鈥?/div>
Completely static memory.
錚?/div>
No clock or timing strobe required
鈥?/div>
Equal access and cycle times
鈥?/div>
Common data input and output.
錚?/div>
Three state output
鈥?/div>
Battery backup operation.
錚?/div>
2 chip selection for battery backup
鈥?/div>
Temperature range:
鈭?0
to +85擄C
Rev.2.00, May.26.2004, page 1 of 16

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