R1LV0416CBG-I Series
Wide Temperature Range Version
4M SRAM (256-kword
脳
16-bit)
REJ03C0259-0001
Preliminary
Rev.0.01
Jan.11.2005
Description
The R1LV0416CBG-I is a 4-Mbit static RAM organized 256-kword
脳
16-bit. The R1LV0416C-I Series has realized
higher density, higher performance and low power consumption by employing CMOS process technology (6-transistor
memory cell). The R1LV0416CBG-I Series offers low power standby power dissipation; therefore, it is suitable for
battery backup systems. It has packaged in 48-pin CSP (0.75 mm ball pitch).
Features
鈥?/div>
Single 2.5 V and 3.0 V supply: 2.2 V to 3.6 V
鈥?/div>
Fast access time: 55/70 ns (max)
鈥?/div>
Power dissipation:
錚?/div>
Active: 5.0 mW/MHz (typ)(V
CC
= 2.5 V)
: 6.0 mW/MHz (typ) (V
CC
= 3.0 V)
錚?/div>
Standby: 1.25
碌W
(typ) (V
CC
= 2.5 V)
: 1.5
碌W
(typ) (V
CC
= 3.0 V)
鈥?/div>
Completely static memory.
錚?/div>
No clock or timing strobe required
鈥?/div>
Access and cycle times are equal.
鈥?/div>
Common data input and output.
錚?/div>
Three state output
鈥?/div>
Battery backup operation.
錚?/div>
2 chip selection for battery backup
鈥?/div>
Temperature range:
鈭?0
to +85擄C
Ordering Information
Type No.
R1LV0416CBG-5SI
R1LV0416CBG-7LI
Access time
55 ns
70 ns
Package
48-ball CSP with 0.75 mm ball pitch (48FHH)
Preliminary: The specifications of this device are subject to change without notice. Please contact your nearest
Renesas Technology鈥檚 Sales Dept. regarding specifications.
Rev.0.01, Jan.11.2005, page 1 of 14
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