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2 097 152 words by 36-bit organization
(alternative 4 194 304 words by 18-bit)
Fast access and cycle time
60 ns access time
110 ns cycle time (-60 version)
70 ns access time
130 ns cycle time (-70 version)
Fast page mode capability with
40 ns cycle time (-60 version)
45 ns cycle time (-70 version)
Single + 5 V (鹵 10 %) supply
Low power dissipation
max. 6952 mW active (-60 version)
max. 6292 mW active (-70 version)
CMOS 鈥?132 mW standby
TTL 鈥?264 mW standby
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CAS-before-RAS refresh
RAS-only-refresh
Hidden-refresh
12 decoupling capacitors mounted on
substrate
All inputs, outputs and clocks fully TTL
compatible
72 pin Single in-Line Memory Module with
31.75 mm height
Utilizes eight 1M
脳
1-DRAMs and sixteen
1M
脳
4 DRAMs in 300 mil SOJ-packages
1024 refresh cycles / 16 ms
Tin-Lead contact pads (S - version)
God contact pads (GS - version)
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Ordering Information
Type
HYM 362140S-60
HYM 362140S-70
HYM 362140GS-60
HYM 362140GS-70
Ordering Code
Q67100-Q955
Q67100-Q954
Q67100-Q957
Q67100-Q956
Package
L-SIM-72-8
L-SIM-72-8
L-SIM-72-8
L-SIM-72-8
Description
DRAM Module
(access time 60 ns)
DRAM Module
(access time 70 ns)
DRAM Module
(access time 60 ns)
DRAM Module
(access time 70 ns)
Semiconductor Group
601
05.94
next
Q67100-Q956相關(guān)型號PDF文件下載
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型號
版本
描述
廠商
下載
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