鈥?/div>
Low power dissipation
max. 605 mW active (-60 version)
max. 550 mW active (-70 version)
max. 468 mW active (-80 version)
Standby power dissipation:
11 mW standby standby (TTL)
5.5 mW max.standby (CMOS)
Output unlatched at cycle end allows two-
dimensional chip selection
Read, write, read-modify write, CAS-before-
RAS refresh, RAS-only refresh, hidden
refresh, fast page mode capability
All inputs and outputs TTL-compatible
1024 refresh cycles / 16 ms
Plastic Packages: P-SOJ-28-2 400 mil width
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Ordering Information
Type
HYB 514800BJ-60
HYB 514800BJ-70
HYB 514800BJ-80
Ordering Code
Q67100-Q849
Q67100-Q850
Q67100-Q851
Package
P-SOJ-28-2
P-SOJ-28-2
P-SOJ-28-2
Descriptions
DRAM
(access time 60 ns)
DRAM
(access time 70 ns)
DRAM
(access time 80 ns)
Semiconductor Group
125
01.95
next
Q67100-Q850相關(guān)型號(hào)PDF文件下載
-
型號(hào)
版本
描述
廠商
下載
-
英文版
16-Bit Single-Chip Microcontroller Bare Die Delivery
-
英文版
application-oriented single-chip microcomputer
-
英文版
Bus Arbiter for SAB80286 Processors
-
英文版
Bus Arbiter for SAB80286 Processors
SIEMENS [S...
-
英文版
IC-SM-8-BIT CPU-12MHZ
ETC
-
英文版
256K x 16-Bit EDO-Dynamic RAM
-
英文版
256K x 16-Bit EDO-Dynamic RAM
SIEMENS [S...
-
英文版
256K x 16-Bit EDO-Dynamic RAM
-
英文版
256K x 16-Bit EDO-Dynamic RAM
SIEMENS [S...
-
英文版
256K x 16-Bit EDO-Dynamic RAM
-
英文版
256K x 16-Bit EDO-Dynamic RAM
SIEMENS [S...
-
英文版
256K x 16-Bit EDO-Dynamic RAM
-
英文版
256K x 16-Bit EDO-Dynamic RAM
SIEMENS [S...
-
英文版
256 K x 4-Bit Dynamic RAM Low Power 256 K x 4-Bit Dynamic RA...
-
英文版
256 K x 4-Bit Dynamic RAM Low Power 256 K x 4-Bit Dynamic RA...
SIEMENS [S...
-
英文版
1 M x 1-Bit Dynamic RAM Low Power 1 M ⅴ 1-Bit Dynamic RAM
-
英文版
1 M x 1-Bit Dynamic RAM Low Power 1 M ⅴ 1-Bit Dynamic RAM
SIEMENS [S...
-
英文版
1 M x 1-Bit Dynamic RAM Low Power 1 M ⅴ 1-Bit Dynamic RAM
-
英文版
1 M x 1-Bit Dynamic RAM Low Power 1 M ⅴ 1-Bit Dynamic RAM
SIEMENS [S...
-
英文版
1 M x 1-Bit Dynamic RAM Low Power 1 M ⅴ 1-Bit Dynamic RAM