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Q67100-Q2096 Datasheet

  • Q67100-Q2096

  • 4M x 32-Bit EDO-DRAM Module

  • 10頁

  • INFINEON   INFINEON

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4M x 32-Bit EDO-DRAM Module
HYM 324025S/GS-50/-60
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4 194 304 words by 32-bit organized SIMM modules
for PC main memory applications
Fast access and cycle time
50 ns access time
84 ns cycle time (-50 version)
60 ns access time
104 ns cycle time (-60 version)
Hyper page mode (EDO) capability
20 ns cycle time (-50 version)
25 ns cycle time (-60 version)
Single + 5 V (鹵 10 %) supply
Low power dissipation
max. 5280 mW active (HYM 324025S/GS-50)
max. 4840 mW active (HYM 324025S/GS-60)
CMOS 鈥?44 mW standby
TTL
鈥?8 mW standby
CAS-before-RAS refresh
RAS-only-refresh
Hidden-refresh
8 decoupling capacitors mounted on substrate
All inputs, outputs and clocks fully TTL compatible
72 pin Single in-Line Memory Module with 22.86 mm (900 mil) height
Utilizes eight 4Mx4-DRAMs in 300mil wide SOJ packages
2048 refresh cycles / 32 ms
Optimized for use in byte-write non-parity applications
Tin-Lead contact pads (S - version)
Gold contact pads (GS - version)
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Semiconductor Group
1
9.96

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