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Q67100-Q2003 Datasheet

  • Q67100-Q2003

  • 1M x 64-Bit Dynamic RAM Module

  • 85.80KB

  • 11頁

  • INFINEON   INFINEON

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1M
脳
64-Bit Dynamic RAM Module
HYM 641010GS-60/-70
HYM 641020GS-60/-70
Advanced Information
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1 048 576 words by 64-bit organization
Fast access and cycle time
60 ns access time
110 ns cycle time (-60 version)
70 ns access time
130 ns cycle time (-70 version)
Fast page mode capability with
40 ns cycle time (-60 version)
45 ns cycle time (-70 version)
Single + 5 V (鹵 10 %) supply
Low power dissipation
max. 9680 mW active (-60 version)
max. 8800 mW active (-70 version)
CMOS 鈥?451 mW standby
TTL
鈥?550 mW standby
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CAS-before-RAS refresh, RAS-only-refresh
Byte Write Capability
16 decoupling capacitors mounted on substrate
All inputs, outputs and clock fully TTL compatible
4 Byte interleave enabled, Dual Address inputs (A0/B0)
Buffered inputs except RAS and DQ
168 pin, dual read-out, Single in-Line Memory Module
Utilizes sixteen 1M
脳
4 -DRAMs (HYB 514400BJ/BT) and
four BiCMOS 8-bit buffers/line drivers 74ABT244
Two version : HYM 641010GS with SOJ-components (8.89 mm module thickness)
HYM 641020GS with TSOPII-components (4.06 mm module thickness)
1024 refresh cycles / 16 ms
Optimized for use in byte-write non-parity applications
Gold contact pads,double sided module with 25.35 mm (1000 mil) height
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Semiconductor Group
1
12.95

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