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Single + 5 V (鹵 10 %) supply
Low power dissipation
max. 550 mW active (HYB5116405BJ/BT-50)
max. 495 mW active (HYB5116405BJ/BT-60)
max. 440 mW active (HYB5116405BJ/BT-70)
max. 660 mW active (HYB5117405BJ/BT-50)
max. 605 mW active (HYB5117405BJ/BT-60)
max. 550 mW active (HYB5117405BJ/BT-70)
11 mW standby (TTL)
5.5. mW standby (MOS)
Output unlatched at cycle end allows two-dimensional chip selection
Read, write, read-modify-write, CAS-before-RAS refresh, RAS-only refresh, hidden refresh,
self refresh and test mode
Hyper page mode (EDO) capability
All inputs, outputs and clocks fully TTL-compatible
4096 refresh cycles / 64 ms for HYB5116405BJ/BT (4k-Refresh)
2048 refresh cycles / 32 ms for HYB5117405BJ/BT (2k-Refresh)
Plastic Package:
P-SOJ-26/24 300 mil
P TSOPII-26/24 300 mil
Semiconductor Group
1
1.96