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Q67040-S4369 Datasheet

  • Q67040-S4369

  • Silicon Carbide Schottky Diode

  • 9頁(yè)

  • INFINEON   INFINEON

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Final data
Silicon Carbide Schottky Diode
鈥?/div>
Worlds first 600V Schottky diode
鈥?/div>
Revolutionary semiconductor
material - Silicon Carbide
鈥?/div>
Switching behavior benchmark
鈥?/div>
No reverse recovery
鈥?/div>
No temperature influence on
the switching behavior
鈥?/div>
Ideal diode for Power Factor
Correction up to 800W
1)
鈥?/div>
No forward recovery
P-TO220-2-2.
SDP04S60, SDD04S60
SDT04S60
Product Summary
V
RRM
Q
c
I
F
P-TO252-3-1.
600
13
4
P-TO220-3-1.
V
nC
A
Type
SDP04S60
SDD04S60
SDT04S60
Package
P-TO220-3-1.
P-TO252-3-1.
P-TO220-2-2.
Ordering Code
Q67040-S4369
Q67040-S4368
Q67040-S4445
Marking
D04S60
D04S60
D04S60
Pin 1
n.c.
PIN 2
C
PIN 3
A
n.c.
A
C
C
Value
4
5.6
12.5
18
40
0.78
600
600
36.5
A
Unit
A
Maximum Ratings,
at
T
j
= 25 擄C, unless otherwise specified
Symbol
Parameter
Continuous forward current,
T
C
=100擄C
RMS forward current,
f=50Hz
T
C
=25擄C,
t
p
=10ms
I
F
I
FRMS
Surge non repetitive forward current, sine halfwave
I
FSM
Repetitive peak forward current
T
j
=150擄C,
T
C
=100擄C,
D=0.1
I
FRM
I
FMAX
鈭玦
2
dt
V
RRM
V
RSM
P
tot
T
j ,
T
stg
Non repetitive peak forward current
t
p
=10碌s,
T
C
=25擄C
i
2
t
value,
T
C
=25擄C,
t
p
=10ms
Repetitive peak reverse voltage
Surge peak reverse voltage
Power dissipation,
T
C
=25擄C
Operating and storage temperature
A虜s
V
W
擄C
-55... +175
Page 1
2004-02-11

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