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Q67040-S4395 Datasheet

  • Q67040-S4395

  • Cool MOS Power Transistor

  • 195.17KB

  • 14頁

  • INFINEON   INFINEON

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Preliminary data
SPP11N60C3, SPB11N60C3
SPI11N60C3
Cool MOS鈩?Power Transistor
=
Feature
鈥?New
revolutionary high voltage technology
鈥?/div>
Worldwide best
R
DS(on)
in TO 220
鈥?/div>
Ultra low gate charge
鈥?Periodic
avalanche rated
鈥?/div>
Extreme dv/dt rated
鈥?High
peak current capability
鈥?Improved
transconductance
鈥?150
擄C operating temperature
P-TO262-3-1
C OLMOS
O
Power Semiconductors
Product Summary
V
DS
@ T
jmax
R
DS(on)
I
D
P-TO263-3-2
650
0.38
11
V
鈩?/div>
A
P-TO220-3-1
Type
SPP11N60C3
SPB11N60C3
SPI11N60C3
Package
P-TO220-3-1
P-TO263-3-2
P-TO262-3-1
Ordering Code
Q67040-S4395
Q67040-S4396
Q67042-S4403
Marking
11N60C3
11N60C3
11N60C3
Maximum Ratings,
at
T
j
= 25 擄C, unless otherwise specified
Parameter
Continuous drain current
T
C
= 25 擄C
T
C
= 100 擄C
Symbol
I
D
Value
11
7
Unit
A
Pulsed drain current,
t
p
limited by
T
jmax
Avalanche energy, single pulse
I
D
=5.5A,
V
DD
=50V
I
D puls
E
AS
E
AR
I
AR
dv/dt
V
GS
V
GS
P
tot
T
j ,
T
stg
Page 1
33
340
0.6
11
6
鹵20
鹵30
125
-55... +150
W
擄C
A
V/ns
V
mJ
Avalanche energy, repetitive
t
AR
limited by
T
jmax 1)
I
D
=11A,
V
DD
=50V
Avalanche current, repetitive
t
AR
limited by
T
jmax
Reverse diode dv/dt
I
S
=11A,
V
DS
<=V
DD
, di/dt=100A/碌s,
T
jmax
=150擄C
Gate source voltage static
Gate source voltage dynamic
Power dissipation,
T
C
= 25擄C
Operating and storage temperature
2001-07-05

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