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Q67040-S4230 Datasheet

  • Q67040-S4230

  • Fast S-IGBT in NPT-technology with soft, fast recovery anti-...

  • 13頁

  • INFINEON   INFINEON

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SKP06N60
SKB06N60
Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
鈥?/div>
75% lower
E
off
compared to previous generation combined with
low conduction losses
鈥?/div>
Short circuit withstand time 鈥?10
碌s
鈥?/div>
Designed for:
- Motor controls
- Inverter
鈥?/div>
NPT-Technology for 600V applications offers:
- very tight parameter distribution
- high ruggedness, temperature stable behaviour
- parallel switching capability
鈥?/div>
Very soft, fast recovery anti-parallel EmCon diode
C
G
E
Type
SKP06N60
SKB06N60
Maximum Ratings
Parameter
V
CE
600V
I
C
6A
V
CE(sat)
2.3V
T
j
150擄C
Package
TO-220AB
TO-263AB
Ordering Code
Q67040-S4230
Q67040-S4231
Symbol
V
CE
I
C
Value
600
12
6.9
Unit
V
A
Collector-emitter voltage
DC collector current
T
C
= 25擄C
T
C
= 100擄C
Pulsed collector current,
t
p
limited by
T
jmax
Turn off safe operating area
V
CE
鈮?/div>
600V,
T
j
鈮?/div>
150擄C
Diode forward current
T
C
= 25擄C
T
C
= 100擄C
Diode pulsed current,
t
p
limited by
T
jmax
Gate-emitter voltage
Short circuit withstand time
Power dissipation
T
C
= 25擄C
Operating junction and storage temperature
1)
I
Cpul s
-
I
F
24
24
12
6
I
Fpul s
V
GE
t
SC
P
tot
T
j
,
T
stg
24
鹵20
10
68
-55...+150
V
碌s
W
擄C
V
GE
= 15V,
V
CC
鈮?/div>
600V,
T
j
鈮?/div>
150擄C
1)
Allowed number of short circuits: <1000; time between short circuits: >1s.
1
Mar-00

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