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Q62703-N50-X16 Datasheet

  • Q62703-N50-X16

  • EINFACHKOPPLER 100BIS200PROZENT BEI 10MA

  • 216.94KB

  • 4頁

  • ETC

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CNY17F SERIES
PHOTOTRANSISTOR
NO BASE CONNECTION
OPTOCOUPLER
FEATURES
鈥?High Current Transfer Ratio
CNY17F-1, 40-80%
CNY17F-2, 63-125%
CNY17F-3, 100-200%
CNY17F-4, 160-320%
鈥?Breakdown Voltage, 5300 VAC
RMS
鈥?High Collector-Emitter Voltage
鈥?V
CEO
=70 V
鈥?No Base Terminal Connection for Improved
Common Mode Interface Immunity
鈥?Field-Effect Stable by TRIOS*
鈥?Long Term Stability
鈥?Industry Standard Dual-in-Line Package
鈥?Underwriters Lab File #E52744
V
鈥?/div>
VDE #0884, Available with Option 1
D E
Dimensions in inches (mm)
Pin One ID
3
.248 (6.30)
.256 (6.50)
4
5
6
2
1
Anode 1
Cathode 2
NC 3
6 Base
5 Collector
4 Emitter
.335 (8.50)
.343 (8.70)
.039
(1.00)
Min.
4擄
typ.
.018 (0.45)
.022 (0.55)
.300 (7.62)
typ.
.130 (3.30)
.150 (3.81)
18擄 typ.
.020 (.051) min.
.031 (0.80)
.035 (0.90)
.100 (2.54) typ.
.010 (.25)
.014 (.35)
.300 (7.62)
.347 (8.82)
.110 (2.79)
.150 (3.81)
Maximum Ratings
(T
A
=25
擄
C)
Emitter
Reverse Voltage ................................................ 6 V
DC Forward Current .................................... 60 mA
Surge Forward Current (t
鈮?/div>
10
碌
s) ...................2.5 A
Total Power Dissipation ............................ 100 mW
Detector
Collector-Emitter Breakdown Voltage ............. 70 V
Collector Current ..........................................50 mA
Collector Current (t
鈮?/div>
1 ms) ......................... 100 mA
Total Power Dissipation ............................ 150 mW
Package
Isolation Test Voltage (between emitter and detector
referred to standard climate 23/50
DIN 50014) .................................... 5300 VAC
RMS
Creepage .................................................... >7 mm
Clearance................................................... >7 mm
Isolation Thickness between Emitter
and Detector.........................................
鈮?/div>
0.4 mm
Comparative Tracking Index per
DIN IEC 112/VDE 0303, part 1 ...................... 175
Isolation Resistance (V
10
=500 V)
.................鈮?/div>
10
11
鈩?/div>
Storage Temperature Range ............鈥?5 to +150
擄
C
Ambient Temperature Range ...........鈥?5 to +100
擄
C
Junction Temperature ................................... 100
擄
C
Soldering Temperature
(max. 10 s, dip soldering:
distance to seating plane
鈮?/div>
1.5 mm) .......... 260
擄
C
*
TRIOS鈥擳R
ansparent
IO
n
Sh
ield
DESCRIPTION
The CNY17F is an optocoupler consisting of a Gallium Arsenide infrared
emitting diode optically coupled to a silicon planar phototransistor
detector in a plastic plug-in DIP-6 package.
The coupling device is suitable for signal transmission between two
electrically separated circuits. The potential difference between the cir-
cuits to be coupled is not allowed to exceed the maximum permissible
reference voltages.
In contrast to the CNY17 Series, the base terminal of the F type is not
connected, resulting in a substantially improved common-mode interfer-
ence immunity.
Characteristics
(T
A
=25
擄
C)
Symbol
Emitter
Forward Voltage
Breakdown Voltage
Reverse Current
Capacitance
Thermal Resistance
Detector
Capacitance
Thermal Resistance
Package
Saturation Voltage,
Collector-Emitter
Coupling
Capacitance
V
CEsat
C
C
0.25 (
鈮?/div>
0.4)
0.6
V
pF
I
F
=10 mA
I
C
=2.5 mA
C
CE
R
thJA
5.2
500
pF
K/W
V
CE
=5 V, f=1
MHz
V
F
V
BR
I
R
C
O
R
thJA
1.25 (
鈮?/div>
1.65)
鈮モ墺
鈮?/div>
6
0.01 (
鈮?/div>
10)
25
750
V
V
碌
A
pF
K/W
I
F
=60mA
I
R
=10
碌
A
V
R
=6 V
V
R
=0 V, f=1 MHz
Unit
Condition
5鈥?

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