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Q62702-G0058 Datasheet

  • Q62702-G0058

  • Si-MMIC-Amplifier in SIEGET 25-Technologie (Multifunctional ...

  • 84.52KB

  • 8頁

  • INFINEON   INFINEON

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上傳產品規(guī)格書

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BGA 425
Si-MMIC-Amplifier
Preliminary data
鈥?/div>
Multifunctional casc. 50
鈩?/div>
block (LNA / MIX)
鈥?/div>
Unconditionally stable
鈥?/div>
Gain |S
21
|
2
= 18.5 dB at 1.8 GHz (appl.1)
gain |S
21
|
2
= 22 dB at 1.8 GHz (appl.2)
in SIEGET
廬
25-Technologie
3
4
IP
3out
= +7 dBm at 1.8 GHz (V
D
=3V,I
D
=9.5mA)
鈥?/div>
Noise figure
NF
= 2.2 dB at 1.8 GHz
鈥?/div>
Reverse isolation >28 dB (appl.1) >35 dB (appl.2)
鈥?/div>
typical device voltage
V
D
= 2 V to 5 V
Tape loading orientation
Circuit Diagram
2
1
VPS05605
6
+
V
3
OUTA
1
IN
4
OUTB
2, 5
ESD: Electrostatic discharge
sensitive device,
observe handling precaution!
GND
EHA07371
PIN Configuration
Type
BGA 425
Marking Ordering Code
BMs
Q62702-G0058
Package
1, Out B
SOT-343 4, IN
2, GND
5, GND
3, Out A
6, +V
Maximum Ratings
Parameter
Device current
Device voltage
Total power dissipation,
T
S
鈮?/div>
tbd 擄C
Symbol
Value
25
6
150
-10
150
-65 ...+150
-65 ...+150
Unit
mA
V
mW
dBm
擄C
I
D
V
D
,+V
P
tot
P
RFin
T
j
T
A
T
stg
1)
R
F
input power
Junction temperature
Ambient temperature
Storage temperature
Thermal Resistance
Junction - soldering point
R
thJS
鈮?/div>
tbd
K/W
1)
T
S
is measured on the ground lead at the soldering point to the pcb
Semiconductor Group
Semiconductor Group
1
1
Jul-14-1998
1998-11-01

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