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Q62702-F1794 Datasheet

  • Q62702-F1794

  • NPN Silicon RF Transistor (For highest gain low noise amplif...

  • 8頁

  • INFINEON   INFINEON

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SIEGET
廬
45
NPN Silicon RF Transistor
Preliminary data
鈥?/div>
For highest gain low noise amplifier
at 1.8 GHz and 2 mA / 2 V
Outstanding
G
a
= 20 dB
Noise Figure
F
= 0.95 dB
鈥?/div>
For oscillators up to 15 GHz
鈥?/div>
Transition frequency
f
T
= 45 GHz
鈥?/div>
Gold metalization for high reliability
鈥?/div>
SIEGET
廬
45 - Line
Siemens Grounded Emitter Transistor
45
GHz
f
T
-
Line
BFP 520
3
4
2
1
VPS05605
ESD: Electrostatic discharge
sensitive device, observe handling precaution!
Type
BFP 520
Marking Ordering Code
APs
Q62702-F1794
Pin Configuration
1=B
2=E
3=C
4=E
Package
SOT-343
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation,
T
S
鈮?/div>
105 擄C
Junction temperature
Ambient temperature
Storage temperature
Thermal Resistance
Junction - soldering point
1)
Symbol
Value
2.5
12
1
40
4
100
150
-65 ...+150
-65 ...+150
Unit
V
V
V
mA
mA
mW
擄C
擄C
擄C
V
CEO
V
CBO
V
EBO
I
C
I
B
P
tot
T
j
T
A
T
stg
R
thJS
鈮?/div>
450
K/W
1) TS is measured on the collector lead at the soldering point to the pcb
Semiconductor Group
Semiconductor Group
1
1
Sep-09-1998
1998-11-01

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