PNP Silicon Darlington Transistors
BCV 26
BCV 46
q
For general AF applications
q
High collector current
q
High current gain
q
Complementary types: BCV 27, BCV 47 (NPN)
Type
BCV 26
BCV 46
Marking
FDs
FEs
Ordering Code
(tape and reel)
Q62702-C1493
Q62702-C1475
Pin Configuration
1
2
3
B
E
C
Package
1)
SOT-23
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Peak collector current
Base current
Peak base current
Total power dissipation,
T
S
= 74 藲C
Junction temperature
Storage temperature range
Thermal Resistance
Junction - ambient
2)
Junction - soldering point
R
th JA
R
th JS
鈮?/div>
280
鈮?/div>
210
Symbol
V
CE0
V
CB0
V
EB0
I
C
I
CM
I
B
I
BM
P
tot
T
j
T
stg
Values
BCV 26
30
40
10
Unit
BCV 46
60
80
10
500
800
100
200
360
150
鈥?65 鈥?+ 150
mW
藲C
mA
V
K/W
1)
2)
For detailed information see chapter Package Outlines.
Package mounted on epoxy pcb 40 mm
脳
40 mm
脳
1.5 mm/6 cm
2
Cu.
Semiconductor Group
1
5.91
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