Silizium-Fotodiode
Silicon Photodiode
BPW 33
0.6
0.4
1.2
0.7
0.8
0.6
Cathode marking
4.0
3.7
5.4
4.9
4.5
4.3
Chip position
0.6
0.4
0.8
0.6
0.5
0.3
0.35
0.2
0.6
0.4
0 ... 5藲
5.08 mm
spacing
Photosensitive area
2.65 mm x 2.65 mm
GEO06643
1.8
1.4
3.5
3.0
0.6
0.4
2.2
1.9
Approx. weight 0.1 g
Ma脽e in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.
Wesentliche Merkmale
q
Speziell geeignet f眉r Anwendungen im
Bereich von 350 nm bis 1100 nm
q
Sperrstromarm (typ. 20 pA)
q
DIL-Plastikbauform mit hoher
Packungsdichte
Anwendungen
q
Belichtungsmesser
q
Farbanalyse
Features
q
Especially suitable for applications from
350 nm to 1100 nm
q
Low reverse current (typ. 20 pA)
q
DIL plastic package with high packing
density
Applications
q
Exposure meters
q
Color analysis
Typ
Type
BPW 33
Bestellnummer
Ordering Code
Q62702-P76
Semiconductor Group
1
1997-11-19
feo06643
1
2
3
4
