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PZT651T1 Datasheet

  • PZT651T1

  • HIGH CURRENT NPN SILICON TRANSISTOR SURFACE MOUNT

  • 104.59KB

  • 6頁(yè)

  • ONSEMI

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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by PZT651T1/D
NPN Silicon Planar
Epitaxial Transistor
This NPN Silicon Epitaxial transistor is designed for use in industrial and consumer
applications. The device is housed in the SOT鈥?23 package which is designed for
medium power surface mount applications.
鈥?/div>
High Current: 2.0 Amp
鈥?/div>
The SOT鈥?23 package can be soldered using wave or reflow.
鈥?/div>
SOT鈥?23 package ensures level mounting, resulting in improved thermal
conduction, and allows visual inspection of soldered joints. The formed
leads absorb thermal stress during soldering, eliminating the possibility
of damage to the die.
鈥?/div>
Available in 12 mm Tape and Reel
Use PZT651T1 to order the 7 inch/1000 unit reel
Use PZT651T3 to order the 13 inch/4000 unit reel
鈥?/div>
PNP Complement is PZT751T1
COLLECTOR 2,4
PZT651T1
Motorola Preferred Device
SOT鈥?23 PACKAGE
HIGH CURRENT
NPN SILICON
TRANSISTOR
SURFACE MOUNT
4
1
2
3
BASE
1
EMITTER 3
CASE 318E鈥?4, STYLE 1
TO鈥?61AA
MAXIMUM RATINGS
(TC = 25擄C unless otherwise noted)
Rating
Collector鈥揈mitter Voltage
Collector鈥揃ase Voltage
Emitter鈥揃ase Voltage
Collector Current
Total Power Dissipation @ TA = 25擄C(1)
Derate above 25擄C
Storage Temperature Range
Junction Temperature
Symbol
VCEO
VCBO
VEBO
IC
PD
Tstg
TJ
Value
60
80
5.0
2.0
0.8
6.4
鈥?65 to 150
150
Unit
Vdc
Vdc
Vdc
Adc
Watts
mW/擄C
擄C
擄C
DEVICE MARKING
651
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance from Junction鈥搕o鈥揂mbient in Free Air
Maximum Temperature for Soldering Purposes
Time in Solder Bath
Symbol
R
胃JA
TL
Max
156
260
10
Unit
擄C/W
擄C
Sec
1. Device mounted on a FR鈥? glass epoxy printed circuit board using minimum recommended footprint.
Preferred
devices are Motorola recommended choices for future use and best overall value.
Thermal Clad is a trademark of the Bergquist Company
REV 1
漏
Motorola, Inc. 1996
Motorola Small鈥揝ignal Transistors, FETs and Diodes Device Data
1

PZT651T1 產(chǎn)品屬性

  • 10

  • 分離式半導(dǎo)體產(chǎn)品

  • 晶體管(BJT) - 單路

  • -

  • NPN

  • 2A

  • 60V

  • 500mV @ 200mA，2A

  • -

  • 75 @ 1A，2V

  • 800mW

  • 75MHz

  • 表面貼裝

  • TO-261-4，TO-261AA

  • SOT-223

  • Digi-Reel®

  • PZT651T1OSDKR

PZT651T1相關(guān)型號(hào)PDF文件下載

  • 型號(hào)
    版本
    描述
    廠商
    下載
  • 英文版
    HIGH CURRENT NPN SILICON TRANSISTOR SURFACE MOUNT
    ONSEMI
  • 英文版
    HIGH CURRENT NPN SILICON TRANSISTOR SURFACE MOUNT
    ONSEMI [ON...
  • 英文版
    HIGH CURRENT NPN SILICON TRANSISTOR SURFACE MOUNT
    ONSEMI
  • 英文版
    HIGH CURRENT NPN SILICON TRANSISTOR SURFACE MOUNT
    ONSEMI [ON...
  • 英文版
    TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 2A I(C) | TO-261AA
    ETC
  • 英文版
    TRANS NPN 60V 2A SOT223
  • 英文版
    BIPOLAR TRANSISTOR, NPN, 60V; Transistor Polarity:NPN; Colle...
    ON Semiconductor
  • 英文版
    NPN Silicon Planar Epitaxial Transistor
    ETC
  • 英文版
    SOT?23 PACKAGE HIGH CURRENT
  • 英文版
    NPN Silicon Planar Epitaxial Transistor
    ON Semiconductor

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