conduction, and allows visual inspection of soldered joints. The formed
damage to the die.
鈥?/div>
Available in 12 mm tape and reel
Use PZT2907AT1 to order the 7 inch/1000 unit reel.
Use PZT2907AT3 to order the 13 inch/4000 unit reel.
PZT2907AT1
Motorola Preferred Device
SOT-223 PACKAGE
PNP SILICON
TRANSISTOR
SURFACE MOUNT
COLLECTOR
2,4
1
2
3
4
BASE 1
3
EMITTER
CASE 318E-04, STYLE 1
TO-261AA
MAXIMUM RATINGS
(TC = 25擄C unless otherwise noted)
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation @ TA = 25擄C(1)
Derate above 25擄C
Operating and Storage Temperature Range
Symbol
VCEO
VCBO
VEBO
IC
PD
TJ, Tstg
Value
鈥?60
鈥?60
鈥?5.0
鈥?600
1.5
12
鈥?65 to 150
Unit
Vdc
Vdc
Vdc
mAdc
Watts
mW/擄C
擄C
THERMAL CHARACTERISTICS
Thermal Resistance 鈥?Junction-to-Ambient (surface mounted)
Lead Temperature for Soldering, 0.0625鈥?from case
Time in Solder Bath
R
胃JA
TL
83.3
260
10
擄C/W
擄C
Sec
DEVICE MARKING
P2F
ELECTRICAL CHARACTERISTICS
(TA = 25擄C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage (IC = 鈥?0
碌A(chǔ)dc,
IE = 0)
Collector-Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0)
Emitter-Base Breakdown Voltage (IE = 鈥?0
碌A(chǔ)dc,
IC = 0)
Collector-Base Cutoff Current (VCB = 鈥?50 Vdc, IE = 0)
Collector-Emitter Cutoff Current (VCE = 鈥?30 Vdc, VBE = 0.5 Vdc)
Base-Emitter Cutoff Current (VCE = 鈥?30 Vdc, VBE = 鈥?0.5 Vdc)
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
ICEX
IBEX
鈥?60
鈥?60
鈥?5.0
鈥?/div>
鈥?/div>
鈥?/div>
擄鈥斅?/div>
鈥?/div>
擄鈥斅?/div>
擄鈥斅?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?0
鈥?50
鈥?50
Vdc
Vdc
Vdc
nAdc
nAdc
nAdc
1. Device mounted on a glass epoxy printed circuit board 1.575 in. x 1.575 in. x 0.059 in.; mounting pad for the collector lead min. 0.93 sq. in.
Thermal Clad is a trademark of the Bergquist Company
Preferred
devices are Motorola recommended choices for future use and best overall value.
REV 4
Motorola Small鈥揝ignal
漏
Motorola, Inc. 1996
Transistors, FETs and Diodes Device Data
1
next
PZT2907A 產(chǎn)品屬性
4,000
分離式半導(dǎo)體產(chǎn)品
晶體管(BJT) - 單路
-
PNP
800mA
60V
1.6V @ 50mA,500mA
-
100 @ 150mA,10V
1W
200MHz
表面貼裝
TO-261-4,TO-261AA
SOT-223-4
帶卷 (TR)
PZT2907A-NDPZT2907ATR
PZT2907A相關(guān)型號PDF文件下載
-
型號
版本
描述
廠商
下載
-
英文版
NPN Silicon Switching Transistors
-
英文版
Suface Mount Si-Epitaxial Planar Switching Transistors
DIOTEC
-
英文版
NPN Silicon Switching Transistors
SIEMENS [S...
-
英文版
PNP Silicon Switching Transistors
-
英文版
Suface Mount Si-Epitaxial Planar Switching Transistors
DIOTEC
-
英文版
PNP Silicon Switching Transistors
SIEMENS [S...
-
英文版
NPN Silicon Switching Transistors
-
英文版
NPN General Purpose Amplifier
FAIRCHILD
-
英文版
NPN switching transistor
PHILIPS
-
英文版
NPN Silicon Planar Epitaxial Transistor
-
英文版
Suface Mount Si-Epitaxial Planar Switching Transistors
DIOTEC
-
英文版
NPN GENERAL PURPOSE AMPLIFIER
UTC-IC
-
英文版
NPN Silicon Switching Transistors
PHILIPS [ Phil...
-
英文版
NPN General Purpose Amplifier
FAIRCHILD ...
-
英文版
NPN General Purpose Amplifier
FAIRCHILD ...
-
英文版
NPN switching transistor
PHILIPS [P...
-
英文版
NPN Silicon Switching Transistors
SIEMENS [S...
-
英文版
PNP SILICON TRANSISTOR SURFACE MOUNT
ONSEMI
-
英文版
SOT-223 PACKAGE PNP SILICON TRANSISTOR SURFACE MOUNT
-
英文版
PNP Silicon Switching Transistors