conduction, and allows visual inspection of soldered joints. The formed
damage to the die.
鈥?/div>
Available in 12 mm tape and reel
Use PZT2222AT1 to order the 7 inch/1000 unit reel.
Use PZT2222AT3 to order the 13 inch/4000 unit reel.
BASE
1
3
EMITTER
COLLECTOR
2, 4
PZT2222AT1
Motorola Preferred Device
SOT-223 PACKAGE
NPN SILICON
TRANSISTOR
SURFACE MOUNT
4
1
2
3
CASE 318E-04, STYLE 1
TO-261AA
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage (Open Collector)
Collector Current
Total Power Dissipation up to TA = 25擄C(1)
Storage Temperature Range擄
Junction Temperature擄
Symbol
VCEO
VCBO
VEBO
IC
PD
Tstg
TJ
Value
40
75
6.0
600
1.5
鈥?65 to +150
150
Unit
Vdc
Vdc
Vdc
mAdc
Watts
擄C
擄C
THERMAL CHARACTERISTICS
Thermal Resistance from Junction to Ambient
Lead Temperature for Soldering, 0.0625鈥?from case
Time in Solder Bath
R
胃JA
TL
83.3
260
10
擄C/W
擄C
Sec
DEVICE MARKING
P1F
ELECTRICAL CHARACTERISTICS
(TA = 25擄C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0)
Collector-Base Breakdown Voltage (IC = 10
碌Adc,
IE = 0)
Emitter-Base Breakdown Voltage (IE = 10
碌Adc,
IC = 0)
Base-Emitter Cutoff Current (VCE = 60 Vdc, VBE = 鈥?3.0 Vdc)
Collector-Emitter Cutoff Current (VCE = 60 Vdc, VBE = 鈥?3.0 Vdc)
Emitter-Base Cutoff Current (VEB = 3.0 Vdc, IC = 0)
Thermal Clad is a trademark of the Bergquist Company
Preferred
devices are Motorola recommended choices for future use and best overall value.
V(BR)CEO
V(BR)CBO
V(BR)EBO
IBEX
ICEX
IEBO
40
擄75擄
6.0
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
擄鈥斅?/div>
鈥?/div>
20
10
100
Vdc
Vdc
Vdc
nAdc
nAdc
nAdc
1. Device mounted on an epoxy printed circuit board 1.575 inches x 1.575 inches x 0.059 inches; mounting pad for the collector lead min. 0.93 inches2.
REV 2
漏
Motorola, Inc. 1996
Motorola Small鈥揝ignal Transistors, FETs and Diodes Device Data
1
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