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PTF211802E Datasheet

  • PTF211802E

  • LDMOS RF Power Field Effect Transistor 180 W, 2110-2170 MHz

  • 8頁

  • INFINEON   INFINEON

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PTF211802
LDMOS RF Power Field Effect Transistor
180 W, 2110鈥?170 MHz
Description
The PTF211802 is a 180 W, internally matched, laterally double鈥揹iffused,
GOLDMOS
push鈥損ull FET intended for WCDMA applications from 2110 to
2170 MHz. Full gold metallization ensures excellent device lifetime and
reliability.
Features
鈥?/div>
鈥?/div>
Broadband internal matching
Typical two鈥揷arrier WCDMA performance
- Average output power = 38 W
- Gain = 15 dB
- Efficiency = 25%
- IM3 = 鈥?7 dBc
- ACPR < 鈥?2 dBc
Typical CW performance
- Output power at P鈥?dB = 180 W
- Efficiency = 50%
Integrated ESD protection: Human Body
Model, Class 1 (minimum)
Excellent thermal stability
Low HCI drift
Capable of handling 10:1 VSWR @ 28 V,
180 W (CW) output power
Two鈥揅arrier WCDMA Drive鈥揢p
V
DD
= 28 V, I
DQ
= 2.0 A,
f
1
= 2140 MHz, f
2
= 2150 MHz, 3GPP
WCDMA signal, P/A R = 8 dB, 3.84 MHz BW
35
-30
鈥?/div>
鈥?/div>
Efficiency (%), Gain (dB)
30
25
20
15
10
-35
IMD (dBc), ACPR (dB)
鈥?/div>
鈥?/div>
鈥?/div>
Gain
Drain Efficiency
IM3
-40
-45
-50
-55
PTF211802A
Package 20275
ACPR
5
35
37
39
41
43
45
47
-60
Output Power (dBm), Average
PTF211802E
Package 30275
ESD:
Electrostatic discharge sensitive device 鈥?observe handling precautions!
RF Characteristics
at T
CASE
= 25擄C unless otherwise indicated
WCDMA Measurements
(not subject to production test鈥攙erified by design/characterization in Infineon test fixture)
V
DD
= 28 V, I
DQ
= 2.0 A, P
OUT
= 38 W AVG
f
1
= 2140 MHz, f
2
= 2150 MHz, two鈥揷arrier 3GPP, channel bandwidth = 3.84 MHz , peak/average = 8 dB @ 0.01% CCDF
Characteristic
Intermodulation Distortion
Gain
Drain Efficiency
Symbol
IM3
G
ps
畏
D
Min
鈥?/div>
鈥?/div>
鈥?/div>
Typ
鈥?7
15
25
Max
鈥?/div>
鈥?/div>
鈥?/div>
Units
dBc
dB
%
Two鈥揟one Measurements
(tested in Infineon test fixture)
V
DD
= 28 V, I
DQ
= 2.0 A, P
OUT
= 60 W PEP, f = 2110 MHz, tone spacing = 5 MHz
Characteristic
Gain
Drain Efficiency
Intermodulation Distortion
Data Sheet
1
Symbol
G
ps
畏
D
IMD
Min
12.5
20
鈥?/div>
Typ
15
22
鈥?0
Max
鈥?/div>
鈥?/div>
鈥?8
Units
dB
%
dBc
2004-02-13

PTF211802E相關(guān)型號PDF文件下載

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    LDMOS RF Power Field Effect Transistor 30 W, 2110-2170 MHz
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    LDMOS RF Power Field Effect Transistor 30 W, 2110-2170 MHz
    INFINEON [...
  • 英文版
    LDMOS RF Power Field Effect Transistor 30 W, 2110-2170 MHz
    INFINEON
  • 英文版
    LDMOS RF Power Field Effect Transistor 30 W, 2110-2170 MHz
    INFINEON [...
  • 英文版
    LDMOS RF Power Field Effect Transistor 45 W, 2110-2170 MHz
    INFINEON
  • 英文版
    LDMOS RF Power Field Effect Transistor 45 W, 2110-2170 MHz
    INFINEON [...
  • 英文版
    LDMOS RF Power Field Effect Transistor 90 W, 2110-2170 MHz
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  • 英文版
    LDMOS RF Power Field Effect Transistor 90 W, 2110-2170 MHz
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