鈥?/div>
Broadband internal matching
Typical two鈥揷arrier WCDMA performance at
2140 MHz
- Average output power = 28 W
- Linear Gain = 13.5 dB
- Efficiency = 25%
- Intermodulation distortion = 鈥?7 dBc
- Adjacent channel power = 鈥?2 dBc
Typical CW performance, 2170 MHz, 28 V
- Output power at P鈥?dB = 148 W
- Efficiency = 50%
Integrated ESD protection: Human Body
Model, Class 1 (minimum)
Excellent thermal stability, low HCI drift
Capable of handling 10:1 VSWR @ 28 V,
130 W (CW) output power
Two鈥揅arrier WCDMA Drive-Up
V
DD
= 28 V, I
DQ
= 1.50 A, f = 2140 MHz,
3GPP WCDMA signal, P/A R = 8 dB,
10 MHz carrier spacing
-30
-35
35
30
Efficiency
IM3
鈥?/div>
鈥?/div>
Drain Efficiency (%)
IM3 (dBc),
ACPR (dBc)
-40
-45
-50
-55
-60
36
38
25
20
15
10
5
鈥?/div>
鈥?/div>
ACPR
40
42
44
46
Average Output Power (dBm)
PTF211301A
Package 20260
RF Characteristics
at T
CASE
= 25擄C unless otherwise indicated
WCDMA Measurements
(not subject to production test鈥攙erified by design/characterization in Infineon test fixture)
V
DD
= 28 V, I
DQ
= 1.5 A, P
OUT
= 28 W average
f
1
= 2140 MHz, f
2
= 2150 MHz, 3GPP signal, channel bandwidth = 3.84 MHz , peak/average = 8
dB @ 0.01% CCDF
Characteristic
Intermodulation Distortion
Gain
Drain Efficiency
Symbol
IMD
G
ps
Min
鈥?/div>
鈥?/div>
鈥?/div>
Typ
鈥?7
13.5
25
Max
鈥?/div>
鈥?/div>
鈥?/div>
Units
dBc
dB
%
畏
D
Two鈥揟one Measurements
(tested in Infineon test fixture)
V
DD
= 28 V, I
DQ
= 1.5 A, P
OUT
= 120 W PEP, f = 2170 MHz, tone spacing = 1 MHz
Characteristic
Gain
Drain Efficiency
Intermodulation Distortion
Symbol
G
ps
Min
12
34
鈥?/div>
Typ
13.5
37
鈥?0
Max
鈥?/div>
鈥?/div>
鈥?8
Units
dB
%
dBc
畏
D
IMD
ESD:
Electrostatic discharge sensitive device 鈥?observe handling precautions!
Data Sheet
1
2004-01-02
PTF211301A相關(guān)型號PDF文件下載
-
型號
版本
描述
廠商
下載
-
英文版
Relay Socket Chassis Mount
-
英文版
LDMOS RF Power Field Effect Transistor 30 W, 2110-2170 MHz
-
英文版
LDMOS RF Power Field Effect Transistor 30 W, 2110-2170 MHz
INFINEON [...
-
英文版
LDMOS RF Power Field Effect Transistor 45 W, 2110-2170 MHz
-
英文版
LDMOS RF Power Field Effect Transistor 45 W, 2110-2170 MHz
INFINEON [...
-
英文版
LDMOS RF Power Field Effect Transistor 90 W, 2110-2170 MHz
-
英文版
LDMOS RF Power Field Effect Transistor 90 W, 2110-2170 MHz
INFINEON [...
-
英文版
LDMOS RF Power Field Effect Transistor 130 W, 2110-2170 MHz
-
英文版
LDMOS RF Power Field Effect Transistor 130 W, 2110-2170 MHz
INFINEON [...
-
英文版
LDMOS RF Power Field Effect Transistor 180 W, 2110-2170 MHz
-
英文版
LDMOS RF Power Field Effect Transistor 180 W, 2110-2170 MHz
INFINEON [...
-
英文版
LDMOS RF Power Field Effect Transistor 30 W, 2110-2170 MHz
-
英文版
LDMOS RF Power Field Effect Transistor 30 W, 2110-2170 MHz
INFINEON [...
-
英文版
LDMOS RF Power Field Effect Transistor 30 W, 2110-2170 MHz
-
英文版
LDMOS RF Power Field Effect Transistor 30 W, 2110-2170 MHz
INFINEON [...
-
英文版
LDMOS RF Power Field Effect Transistor 45 W, 2110-2170 MHz
-
英文版
LDMOS RF Power Field Effect Transistor 45 W, 2110-2170 MHz
INFINEON [...
-
英文版
LDMOS RF Power Field Effect Transistor 90 W, 2110-2170 MHz
-
英文版
LDMOS RF Power Field Effect Transistor 90 W, 2110-2170 MHz
INFINEON [...
-
英文版
LDMOS RF Power Field Effect Transistor 130 W, 2110-2170 MHz
INFINEON
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