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PTF210901E Datasheet

  • PTF210901E

  • LDMOS RF Power Field Effect Transistor 90 W, 2110-2170 MHz

  • 8頁

  • INFINEON   INFINEON

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PTF210901
LDMOS RF Power Field Effect Transistor
90 W, 2110鈥?170 MHz
Description
The PTF210901 is an internally matched 90 W
GOLDMOS
FET
intended for WCDMA applications from 2110 to 2170 MHz. Full gold
metallization ensures excellent device lifetime and reliability.
Two鈥揅arrier WCDMA Drive鈥揢p
V
DD
= 28 V, I
DQ
= 1050 mA, f
1
= 2140 MHz, f
2
= 2150 MHz,
3GPP WCDMA signal, P/A R = 8.0 dB, 3.84 MHz BW
-25
30
25
IM3
-35
20
-40
15
-45
Gain
-50
-55
39
40
41
42
43
44
ACPR
10
5
Drain Efficiency
Features
鈥?/div>
鈥?/div>
Internal matching for wideband performance
Typical two鈥揷arrier 3GPP WCDMA
performance
- Average output power = 19 W at 鈥?7 dBc
- Efficiency = 25%
Typical CW performance
- Output power at P鈥?dB = 105 W
- Gain = 15 dB
- Efficiency = 53%
Integrated ESD protection: Human Body Model,
Class 1 (minimum)
Excellent thermal stability, low HCI drift
Capable of handling 10:1 VSWR at 28 V,
90 W (CW) output power
鈥?/div>
-30
Efficiency (%), Gain (dB)
IMD (dBc), ACPR (dBc)
鈥?/div>
鈥?/div>
鈥?/div>
Output Power, Avg. (dBm)
PTF210901E
Package 30248
ESD:
Electrostatic discharge sensitive device 鈥?observe handling precautions!
RF Performance
at T
CASE
= 25擄C unless otherwise indicated
WCDMA Measurements
(not subject to production test鈥攙erified by design/characterization in Infineon test fixture)
V
DD
= 28 V, I
DQ
= 1050 mA, P
OUT
= 19 W AVG
f
1
= 2140 MHz, f
2
= 2150 MHz, 3GPP signal, channel bandwidth 3.84 MHz, 8.0 dB peak/average @ 0.01% CCDF
Characteristic
Intermodulation Distortion
Gain
Drain Efficiency
Symbol
IMD
G
ps
Min
鈥?/div>
鈥?/div>
鈥?/div>
Typ
鈥?7
15
25
Max
鈥?/div>
鈥?/div>
鈥?/div>
Units
dBc
dB
%
畏
D
Two鈥揟one Measurements
(tested in Infineon test fixture)
V
DD
= 28 V, I
DQ
= 1050 mA, P
OUT
= 90 W PEP, f = 2170 MHz, tone spacing = 1 MHz
Characteristic
Gain
Drain Efficiency
Intermodulation Distortion
Data Sheet
1
Symbol
G
ps
Min
13.5
36
鈥?/div>
Typ
15
38
鈥?0
Max
鈥?/div>
鈥?/div>
鈥?8
Units
dB
%
dBc
2004-01-16
畏
D
IMD

PTF210901E相關(guān)型號PDF文件下載

  • 型號
    版本
    描述
    廠商
    下載
  • 英文版
    Relay Socket Chassis Mount
  • 英文版
    LDMOS RF Power Field Effect Transistor 30 W, 2110-2170 MHz
    INFINEON
  • 英文版
    LDMOS RF Power Field Effect Transistor 30 W, 2110-2170 MHz
    INFINEON [...
  • 英文版
    LDMOS RF Power Field Effect Transistor 45 W, 2110-2170 MHz
    INFINEON
  • 英文版
    LDMOS RF Power Field Effect Transistor 45 W, 2110-2170 MHz
    INFINEON [...
  • 英文版
    LDMOS RF Power Field Effect Transistor 90 W, 2110-2170 MHz
    INFINEON
  • 英文版
    LDMOS RF Power Field Effect Transistor 90 W, 2110-2170 MHz
    INFINEON [...
  • 英文版
    LDMOS RF Power Field Effect Transistor 130 W, 2110-2170 MHz
    INFINEON
  • 英文版
    LDMOS RF Power Field Effect Transistor 130 W, 2110-2170 MHz
    INFINEON [...
  • 英文版
    LDMOS RF Power Field Effect Transistor 180 W, 2110-2170 MHz
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  • 英文版
    LDMOS RF Power Field Effect Transistor 180 W, 2110-2170 MHz
    INFINEON [...
  • 英文版
    LDMOS RF Power Field Effect Transistor 30 W, 2110-2170 MHz
    INFINEON
  • 英文版
    LDMOS RF Power Field Effect Transistor 30 W, 2110-2170 MHz
    INFINEON [...
  • 英文版
    LDMOS RF Power Field Effect Transistor 30 W, 2110-2170 MHz
    INFINEON
  • 英文版
    LDMOS RF Power Field Effect Transistor 30 W, 2110-2170 MHz
    INFINEON [...
  • 英文版
    LDMOS RF Power Field Effect Transistor 45 W, 2110-2170 MHz
    INFINEON
  • 英文版
    LDMOS RF Power Field Effect Transistor 45 W, 2110-2170 MHz
    INFINEON [...
  • 英文版
    LDMOS RF Power Field Effect Transistor 90 W, 2110-2170 MHz
    INFINEON
  • 英文版
    LDMOS RF Power Field Effect Transistor 90 W, 2110-2170 MHz
    INFINEON [...
  • 英文版
    LDMOS RF Power Field Effect Transistor 130 W, 2110-2170 MHz
    INFINEON

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