鈥?/div>
Internal matching for wideband performance
Typical two鈥揷arrier WCDMA performance
- Average output power = 11.5 W
- Gain = 14 dB
- Efficiency = 27%
- IM3 = 鈥?7 dBc
Typical CW performance
- Output power at P鈥?dB = 50 W
- Linear gain = 14 dB
- Efficiency = 53%
Integrated ESD protection: Human Body Model,
Class 1 (minimum)
Excellent thermal stability
Low HCI Drift
Capable of handling 10:1 VSWR @ 28 V,
45 W (CW) output power
Two鈥揅arrier WCDMA Drive-Up
V
DD
= 28 V, I
DQ
= 500 mA, f = 2140 MHz, 3GPP WCDMA
signal, P/A R = 8 dB, 10 MHz carrier spacing
-30
Efficiency
30
25
20
ACPR
-45
-50
-55
30
32
34
36
38
40
42
IM3
15
10
5
鈥?/div>
IM3 (dBc), ACPR (dBc)
Drain Efficiency (%)
-35
-40
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Average Output Power (dBm)
PTF210451E
Package 30265
ESD:
Electrostatic discharge sensitive device 鈥?observe handling precautions!
RF Performance
at T
CASE
= 25擄C unless otherwise indicated
WCDMA Measurements
(not subject to production test鈥攙erified by design/characterization in Infineon test fixture)
V
DD
= 28 V, I
DQ
= 500 mA, P
OUT
= 11.5 W AVG
f
1
= 2140 MHz, f
2
= 2150 MHz, 3GPP signal, channel bandwidth = 3.84 MHz , peak/average = 8
dB @ 0.01% CCDF
Characteristic
Intermodulation Distortion
Gain
Drain Efficiency
Symbol
IMD
G
ps
畏
D
Min
鈥?/div>
鈥?/div>
鈥?/div>
Typ
鈥?7
14
27
Max
鈥?/div>
鈥?/div>
鈥?/div>
Units
dBc
dB
%
Two鈥揟one Measurements
(tested in Infineon test fixture)
V
DD
= 28 V, I
DQ
= 500 mA, P
OUT
= 45 W PEP, f = 2170 MHz, Tone Spacing = 1 MHz
Characteristic
Gain
Drain Efficiency
Intermodulation Distortion
Data Sheet
1
Symbol
G
ps
畏
D
IMD
Min
13
35
鈥?/div>
Typ
14
38
鈥?2
Max
鈥?/div>
鈥?/div>
鈥?0
Units
dB
%
dBc
2003-12-22
PTF210451E相關(guān)型號PDF文件下載
-
型號
版本
描述
廠商
下載
-
英文版
Relay Socket Chassis Mount
-
英文版
LDMOS RF Power Field Effect Transistor 30 W, 2110-2170 MHz
-
英文版
LDMOS RF Power Field Effect Transistor 30 W, 2110-2170 MHz
INFINEON [...
-
英文版
LDMOS RF Power Field Effect Transistor 45 W, 2110-2170 MHz
-
英文版
LDMOS RF Power Field Effect Transistor 45 W, 2110-2170 MHz
INFINEON [...
-
英文版
LDMOS RF Power Field Effect Transistor 90 W, 2110-2170 MHz
-
英文版
LDMOS RF Power Field Effect Transistor 90 W, 2110-2170 MHz
INFINEON [...
-
英文版
LDMOS RF Power Field Effect Transistor 130 W, 2110-2170 MHz
-
英文版
LDMOS RF Power Field Effect Transistor 130 W, 2110-2170 MHz
INFINEON [...
-
英文版
LDMOS RF Power Field Effect Transistor 180 W, 2110-2170 MHz
-
英文版
LDMOS RF Power Field Effect Transistor 180 W, 2110-2170 MHz
INFINEON [...
-
英文版
LDMOS RF Power Field Effect Transistor 30 W, 2110-2170 MHz
-
英文版
LDMOS RF Power Field Effect Transistor 30 W, 2110-2170 MHz
INFINEON [...
-
英文版
LDMOS RF Power Field Effect Transistor 30 W, 2110-2170 MHz
-
英文版
LDMOS RF Power Field Effect Transistor 30 W, 2110-2170 MHz
INFINEON [...
-
英文版
LDMOS RF Power Field Effect Transistor 45 W, 2110-2170 MHz
-
英文版
LDMOS RF Power Field Effect Transistor 45 W, 2110-2170 MHz
INFINEON [...
-
英文版
LDMOS RF Power Field Effect Transistor 90 W, 2110-2170 MHz
-
英文版
LDMOS RF Power Field Effect Transistor 90 W, 2110-2170 MHz
INFINEON [...
-
英文版
LDMOS RF Power Field Effect Transistor 130 W, 2110-2170 MHz
INFINEON
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