鈥?/div>
Broadband internal matching
Typical two鈥揷arrier WCDMA performance
- Average output power = 7.0 W
- Gain = 16 dB
- Efficiency = 25%
- IM3 = 鈥?7 dBc
Typical CW performance
- Output power at P鈥?dB = 36 W
- Gain = 15 dB
- Efficiency = 53%
Integrated ESD protection: Human Body
Model, Class 1 (minimum)
Excellent thermal stability
Low HCI drift
Capable of handling 10:1 VSWR @ 28 V,
30 W (CW) output power
Two鈥揅arrier WCDMA Drive鈥揢p
f = 2140 MHz, 3GPP WCDMA Signal, P/A R = 8 dB,
10 MHz Carrier Spacing, V
DD
= 28 V, I
DQ
= 380 mA
-25
Efficiency
30
25
鈥?/div>
IM3 (dBc), ACPR (dBc)
-30
-35
-40
-45
-50
ACPR
-55
30
32
34
36
38
40
IM3
鈥?/div>
Drain Efficiency (%)
20
15
10
5
0
鈥?/div>
鈥?/div>
鈥?/div>
PTF210301A
Package 20265
Average Output Power (dBm)
PTF210301E
Package 30265
RF Characteristics
at T
CASE
= 25擄C unless otherwise indicated
WCDMA Measurements
(not subject to production test鈥攙erified by design/characterization in Infineon test fixture)
V
DD
= 28 V, I
DQ
= 380 mA, P
OUT
= 36.5 dBm
f
1
= 2140 MHz, f
2
= 2150 MHz, 3GPP signal, channel bandwidth = 3.84 MHz , peak/average = 8
dB @ 0.01% CCDF
Characteristic
Intermodulation Distortion
Gain
Drain Efficiency
Symbol
IMD
G
ps
h
D
Min
鈥?/div>
鈥?/div>
鈥?/div>
Typ
鈥?4
16
20
Max
鈥?/div>
鈥?/div>
鈥?/div>
Units
dBc
dB
%
Two鈥揟one Measurements
(tested in Infineon test fixture)
V
DD
= 28 V, I
DQ
= 380 mA, P
OUT
= 9 W PEP, f = 2170 MHz, tone spacing = 1 MHz
Characteristic
Gain
Drain Efficiency
Intermodulation Distortion
Symbol
G
ps
畏
D
IMD
Min
14.5
15
鈥?/div>
Typ
16
18
鈥?7
Max
鈥?/div>
鈥?/div>
鈥?2
Units
dB
%
dBc
ESD:
Electrostatic discharge sensitive device 鈥?observe handling precautions!
Data Sheet
1
2003-12-22
PTF210301E相關(guān)型號(hào)PDF文件下載
-
型號(hào)
版本
描述
廠商
下載
-
英文版
Relay Socket Chassis Mount
-
英文版
LDMOS RF Power Field Effect Transistor 30 W, 2110-2170 MHz
-
英文版
LDMOS RF Power Field Effect Transistor 30 W, 2110-2170 MHz
INFINEON [...
-
英文版
LDMOS RF Power Field Effect Transistor 45 W, 2110-2170 MHz
-
英文版
LDMOS RF Power Field Effect Transistor 45 W, 2110-2170 MHz
INFINEON [...
-
英文版
LDMOS RF Power Field Effect Transistor 90 W, 2110-2170 MHz
-
英文版
LDMOS RF Power Field Effect Transistor 90 W, 2110-2170 MHz
INFINEON [...
-
英文版
LDMOS RF Power Field Effect Transistor 130 W, 2110-2170 MHz
-
英文版
LDMOS RF Power Field Effect Transistor 130 W, 2110-2170 MHz
INFINEON [...
-
英文版
LDMOS RF Power Field Effect Transistor 180 W, 2110-2170 MHz
-
英文版
LDMOS RF Power Field Effect Transistor 180 W, 2110-2170 MHz
INFINEON [...
-
英文版
LDMOS RF Power Field Effect Transistor 30 W, 2110-2170 MHz
-
英文版
LDMOS RF Power Field Effect Transistor 30 W, 2110-2170 MHz
INFINEON [...
-
英文版
LDMOS RF Power Field Effect Transistor 30 W, 2110-2170 MHz
-
英文版
LDMOS RF Power Field Effect Transistor 30 W, 2110-2170 MHz
INFINEON [...
-
英文版
LDMOS RF Power Field Effect Transistor 45 W, 2110-2170 MHz
-
英文版
LDMOS RF Power Field Effect Transistor 45 W, 2110-2170 MHz
INFINEON [...
-
英文版
LDMOS RF Power Field Effect Transistor 90 W, 2110-2170 MHz
-
英文版
LDMOS RF Power Field Effect Transistor 90 W, 2110-2170 MHz
INFINEON [...
-
英文版
LDMOS RF Power Field Effect Transistor 130 W, 2110-2170 MHz
INFINEON
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