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PTF181301A Datasheet

  • PTF181301A

  • LDMOS RF Power Field Effect Transistor 130 W, 1805-1880 MHz

  • 4頁

  • INFINEON   INFINEON

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Developmental PTF181301
LDMOS RF Power Field Effect Transistor
130 W, 1805鈥?880 MHz
Description
The PTF181301 is a 130 W, internally matched
GOLDMOS
FET intended
for GSM and EDGE applications in the 1805 to 1880 MHz band. Full gold
metallization ensures excellent device lifetime and reliability.
Features
鈥?/div>
鈥?/div>
Broadband internal matching
Typical EDGE performance
- Average output power = 55 W
- Gain = 15.5 dB
- Efficiency = 32%
- EVM = 1.7%
Typical CW performance
- Output power at P鈥?dB = 150 W
- Gain = 14.5 dB
- Efficiency = 47%
Integrated ESD protection: Human Body
Model, Class 1 (minimum)
Excellent thermal stability
Low HCI drift
Capable of handling 10:1 VSWR @ 28 V,
130 W (CW) output power
EDGE EVM Performance
EVM & Efficiency vs. Output Power
V
DD
= 28 V, I
DQ
= 1.8 A, f = 1879.8 MHz
4
40
Efficiency
3
30
鈥?/div>
EVM RMS (Average %)
鈥?/div>
Efficiency (%)
2
20
鈥?/div>
鈥?/div>
鈥?/div>
1
EVM
0
35
38
40
43
45
48
50
10
0
Output Power (dBm)
PTF181301A
Package 20260
ESD:
Electrostatic discharge sensitive device鈥攐bserve handling precautions!
RF Characteristics
at T
CASE
= 25擄C unless otherwise indicated
EDGE Measurements
(not subject to production test鈥攙erified by design/characterization in Infineon test fixture)
V
DD
= 28 V, I
DQ
= 1.8 A, P
OUT
= 55 W, f = 1879.8 MHz
Characteristic
Error Vector Magnitude
Modulation Spectrum @ 400 kHz
Modulation Spectrum @ 600 kHz
Gain
Drain Efficiency
Symbol
EVM (RMS)
ACPR
ACPR
G
ps
Min
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Typ
1.7
鈥?0
鈥?3
15.5
32
Max
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Unit
%
dBc
dBc
dB
%
畏
D
Two鈥揟one Measurements
(tested in Infineon test fixture)
V
DD
= 28 V, I
DQ
= 1.8 A, P
OUT
= 130 W PEP, f = 1880 MHz, tone spacing = 1 MHz
Characteristic
Gain
Drain Efficiency at 鈥?0 dBc IM3
Intermodulation Distortion
Developmental Data Sheet
1 of 4
Symbol
G
ps
Min
鈥?/div>
鈥?/div>
鈥?/div>
Typ
15.5
35
鈥?0
Max
鈥?/div>
鈥?/div>
鈥?/div>
Unit
dB
%
dBc
2004-04-28
畏
D
IMD

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