PTF180101
LDMOS RF Power Field Effect Transistor
10 W, 1805鈥?880 MHz, 1930鈥?990 MHz
10 W, 2110鈥?170 MHz
Description
The PTF180101 is a 10 W, internally鈥搈atched
GOLDMOS
FET device in-
tended for EDGE applications in the DCS/PCS band. Full gold metallization
ensures excellent device lifetime and reliability.
Features
鈥?/div>
Typical EDGE performance
- Average output power = 4.0 W
- Gain = 19.0 dB
- Efficiency = 28%
- EVM = 1.1 %
Typical WCDMA performance
- Average output power = 1.8 W
- Gain = 18.0 dB
- Efficiency = 20%
- ACPR = 鈥?5 dBc
Typical CW performance
- Output power at P鈥?dB = 15 W
- Efficiency = 50%
Integrated ESD protection:
Human Body Model Class 1 (minimum)
Excellent thermal stability
Low HCI drift
Capable of handling 10:1 VSWR @ 28 V,
10 W (CW) output power
PTF180101S
Package 32259
EDGE EVM Performance
EVM and Efficiency vs. Output Power
V
DD
= 28 V, I
DQ
= 0.18 A, f = 1989.8 MHz
4
40
Efficiency
3
30
鈥?/div>
EVM RMS (Average %)
x
鈥?/div>
Efficiency (%)
2
20
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
1
EVM
0
25
30
35
40
10
0
Output Power (dBm)
ESD:
Electrostatic discharge sensitive device 鈥?observe handling precautions!
RF Characteristics, EDGE Operation
at T
CASE
= 25擄C unless otherwise indicated
EDGE Measurements
(not subject to production test鈥攙erified by design/characterization in Infineon test fixture)
V
DD
= 28 V, I
DQ
= 180 mA, P
OUT
= 4 W, f = 1989.8 MHz
Characteristic
Error Vector Magnitude
Modulation Spectrum @ 400 kHz
Modulation Spectrum @ 600 kHz
Gain
Drain Efficiency
Symbol
EVM (RMS)
ACPR
ACPR
G
ps
Min
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Typ
1.1
鈥?0
鈥?0
19
28
Max
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Units
%
dBc
dBc
dB
%
畏
D
Two鈥揟one Measurements
(tested in Infineon test fixture)
V
DD
= 28 V, I
DQ
= 180 mA, P
OUT
= 10 W PEP, f = 1990 MHz, tone spacing = 1 MHz
Characteristic
Gain
Drain Efficiency
Intermodulation Distortion
Data Sheet
1
Symbol
G
ps
Min
18
30
鈥?/div>
Typ
19
33
鈥?0
Max
鈥?/div>
鈥?/div>
鈥?8
Units
dB
%
dBc
2004-02-03
畏
D
IMD
PTF180101S相關(guān)型號PDF文件下載
-
型號
版本
描述
廠商
下載
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TRANSISTOR | MOSFET | N-CHANNEL | 65V V(BR)DSS | SOT-391BVAR
ETC
INFINEON
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