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PTF080101S Datasheet

  • PTF080101S

  • LDMOS RF POWER FIELD EFFECT TRANSISTOR 10W, 860-960MHZ

  • 4頁(yè)

  • INFINEON   INFINEON

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Advance Information
PTF080101
LDMOS RF Power Field Effect Transistor
10 W, 860鈥?60 MHz
Description
The PTF080101 is a 10 W, internally matched
GOLDMOS
FET intended
for EDGE applications in the 860 to 960 MHz band. Full gold metalliza-
tion ensures excellent device lifetime and reliability.
Features
鈥?/div>
鈥?/div>
Broadband internal matching
Typical EDGE performance
- Average output power = 4.0 W
- Gain = 19 dB
- Efficiency = 31%
Typical CW performance
- Output power at P鈥?dB = 13 W
- Gain = 18 dB
- Efficiency = 55%
Integrated ESD protection: Human Body
Model, Class 1 (minimum)
Excellent thermal stability
Low HCI drift
Capable of handling 10:1 VSWR @ 28 V,
10 W (CW) output power
EDGE EVM Performance
EVM and Efficiency vs. Output Power
V
DD
= 28 V, I
DQ
= 0.15 A, f = 959.8 MHz
4
40
鈥?/div>
EVM RMS (Average %)
.
鈥?/div>
3
Efficiency
2
EVM
1
10
20
30
Efficiency (%)
鈥?/div>
鈥?/div>
鈥?/div>
0
25
30
35
40
0
Output Power (dBm)
PTF080101S
Package 32259
ESD:
Electrostatic discharge sensitive device鈥攐bserve handling precautions!
RF Characteristics
at T
CASE
= 25擄C unless otherwise indicated
EDGE Measurements
(not subject to production test鈥攙erified by design/characterization in Infineon test fixture)
V
DD
= 28 V, I
DQ
= 150 mA, P
OUT
= 4.0 W, f = 959.8 MHz
Characteristic
Error Vector Magnitude
Modulation Spectrum @ 400 kHz
Modulation Spectrum @ 600 kHz
Gain
Drain Efficiency
Symbol
EVM (RMS)
ACPR
ACPR
G
ps
Min
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Typ
1.3
鈥?1
鈥?5
19
31
Max
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Units
%
dBc
dBc
dB
%
畏
D
Two鈥揟one Measurements
(tested in Infineon test fixture)
V
DD
= 28 V, I
DQ
= 150 mA, P
OUT
= 10 W PEP, f = 960 MHz, tone spacing = 1 MHz
Characteristic
Gain
Drain Efficiency
Intermodulation Distortion
Developmental Data Sheet
1
Symbol
G
ps
Min
鈥?/div>
鈥?/div>
鈥?/div>
Typ
19
37
鈥?2
Max
鈥?/div>
鈥?/div>
鈥?/div>
Units
dB
%
dBc
2004-03-08
畏
D
IMD

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