PIN Photodiodes
PNZ313B
PIN Photodiode
Unit : mm
For optical control systems
8.0鹵0.5
5.0
7.0鹵0.5
Anode mark 酶1.6
Device
center
Features
Fast response which is well suited to high speed modulated light
detection : t
r
, t
f
= 50 ns (typ.)
High sensitivity, high reliability
Peak sensitivity wavelength matched with infrared light emitting
diodes :
位
P
= 960 nm (typ.)
Wide detection area, wide acceptance half angle :
胃
= 65 deg. (typ.)
Adoption of visible light cutoff resin
13 min.
2.3鹵0.3
2-1.2鹵0.15
2-0.6鹵0.15
0.41鹵0.15
2
1
5.08鹵0.25
Absolute Maximum Ratings
(Ta = 25藲C)
Parameter
Reverse voltage (DC)
Power dissipation
Operating ambient temperature
Storage temperature
Symbol
V
R
P
D
T
opr
T
stg
Ratings
30
100
鈥?0 to +85
鈥?40 to +100
Unit
V
mW
藲C
藲C
2.8鹵0.3
1: Cathode
2: Anode
Electro-Optical Characteristics
(Ta = 25藲C)
Parameter
Dark current
Photo current
Peak sensitivity wavelength
Response time
Response time
Capacitance between pins
Acceptance half angle
*1
Symbol
I
D
I
L
位
P
t
r
, t
f*2
t
r
, t
f*2
C
t
胃
V
R
= 10V
Conditions
V
R
= 10V, L = 1000 lx
*1
V
R
= 10V
V
R
= 10V, R
L
= 1k鈩?/div>
V
R
= 10V, R
L
= 100k鈩?/div>
V
R
= 0V, f = 1MHz
Measured from the optical axis to the half power point
min
15
typ
5
25
960
50
5
70
65
max
50
Unit
nA
碌A
nm
ns
碌s
pF
deg.
Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source.
*2
Switching time measurement circuit
Sig.IN
位
P
= 800nm
50鈩?/div>
R
L
V
R
= 10V
(Input pulse)
Sig.OUT
(Output pulse)
t
d
t
r
t
f
90%
10%
t
d
: Delay time
t
r
: Rise time (Time required for the collector photo current
to increase from 10% to 90% of its final value)
t
f
: Fall time (Time required for the collector photo current
to decrease from 90% to 10% of its initial value)
,,,
,
,,,
,
1
1
2
