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PN2907A Datasheet

  • PN2907A

  • PNP General Purpose Amplifier

  • 3頁

  • MCC   MCC

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MCC
Features
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鈥?/div>
  omponents
21201 Itasca Street Chatsworth

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PN2907A
Through Hole Package
Capable of 600mWatts of Power Dissipation
Pin Configuration
Bottom View
PNP General
Purpose Amplifier
TO-92
A
E
C
B
E
Electrical Characteristics @ 25擄C Unless Otherwise Specified
Symbol
Parameter
Collector-Emitter Breakdown Voltage*
(I
C
=10mAdc, I
B
=0)
Collector-Base Breakdown Voltage
(I
C
=10碌A(chǔ)dc, I
E
=0)
Emitter-Base Breakdown Voltage
(I
E
=10碌A(chǔ)dc, I
C
=0)
Base Cutoff Current
(V
CE
=30Vdc, V
BE
=0.5Vdc)
Collector Cutoff Current
(V
CE
=30Vdc, V
BE
=0.5Vdc)
Collector Cutoff Current
(V
CB
=50Vdc, I
E
=0)
(V
CB
=50Vdc, I
E
=0, T
A
=150擄C)
DC Current Gain*
(I
C
=0.1mAdc, V
CE
=10Vdc)
(I
C
=1.0mAdc, V
CE
=10Vdc)
(I
C
=10mAdc, V
CE
=10Vdc)
(I
C
=150mAdc, V
CE
=10Vdc)
(I
C
=500mAdc, V
CE
=10Vdc)
Collector-Emitter Saturation Voltage
(I
C
=150mAdc, I
B
=15mAdc)
(I
C
=500mAdc, I
B
=50mAdc)
Base-Emitter Saturation Voltage
(I
C
=150mAdc, I
B
=15mAdc)
(I
C
=500mAdc, I
B
=50mAdc)
Current Gain-Bandwidth Product
(I
C
=50mAdc, V
CE
=20Vdc, f=100MHz)
Output Capacitance
(V
CB
=10Vdc, I
E
=0, f=100kHz)
Input Capacitance
(V
EB
=2.0Vdc, I
C
=0, f=100kHz)
Delay Time
(V
CC
=3.0Vdc, I
C
=150mAdc,
Rise Time
I
B1
=15mAdc)
Storage Time
(V
CC
=3.0Vdc, I
C
=150mAdc
Fall Time
I
B1
=I
B2
=15mAdc)
鈮?/div>
300碌s, Duty Cycle
鈮?/div>
2.0%
Min
60
60
5.0
50
50
Max
Units
Vdc
Vdc
Vdc
nAdc
nAdc
碌A(chǔ)dc
OFF CHARACTERISTICS
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
BL
I
CEX
I
CBO
B
0.1
10.0
C
ON CHARACTERISTICS
h
FE
75
100
100
100
50
300
D
0.4
1.6
1.3
2.6
Vdc
V
CE(sat)
V
BE(sat)
Vdc
G
SMALL-SIGNAL CHARACTERISTICS
f
T
C
cbo
C
ibo
200
8.0
30.0
10
40
80
30
MHz
pF
pF
ns
ns
ns
ns
DIM
A
B
C
D
E
G
DIMENSIONS
INCHES
MIN
.175
.175
.500
.016
.135
.095
MM
MIN
4.45
4.45
12.70
0.41
3.43
2.42
SWITCHING CHARACTERISTICS
t
d
t
r
t
s
t
f
*Pulse Width
MAX
.185
.185
---
.020
.145
.105
MAX
4.70
4.70
---
0.63
3.68
2.67
NOTE
www.mccsemi.com

PN2907A 產(chǎn)品屬性

  • 2,500

  • 分離式半導(dǎo)體產(chǎn)品

  • 晶體管(BJT) - 單路

  • -

  • PNP

  • 600mA

  • 60V

  • 1.6V @ 50mA,500mA

  • -

  • 100 @ 150mA,10V

  • 500mW

  • 200MHz

  • 通孔

  • TO-226-3、TO-92-3 標準主體

  • TO-92-3

  • 散裝

  • 497-2403

PN2907A相關(guān)型號PDF文件下載

  • 型號
    版本
    描述
    廠商
    下載
  • 英文版
    TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 800MA I(C) | TO-92
    ETC
  • 英文版
    PNP SILICON PLANAR EPITAXIAL TRANSISTORS
    MICRO-ELECTRONI...
  • 英文版
    PNP SILICON TRANSITOR
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  • 英文版
    PNP SILICON TRANSISTORS
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  • 英文版
    PNP SILICON PLANAR EPITAXIAL TRANSISTORS
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  • 英文版
    PNP SILICON GENERAL PURPOSE AMPLIFIERS AND SWITCHES
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  • 英文版
    PNP SILICON GENERAL PURPOSE AMPLIFIERS AND SWITCHES
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  • 英文版
    PNP switching transistor
    PHILIPS
  • 英文版
    PNP SILICON PLANAR EPITAXIAL TRANSISTORS
    MICRO-ELECTRONI...
  • 英文版
    PNP General Purpose Amplifier
    FAIRCHILD
  • 英文版
    PNP switching transistor
    PHILIPS [P...
  • 英文版
    PNP SILICON PLANAR EPITAXIAL TRANSISTORS
    MICRO-ELECTRONI...
  • 英文版
    PNP General Purpose Amplifier
    FAIRCHILD ...
  • 英文版
    PNP General Purpose Amplifier
    FAIRCHILD ...
  • 英文版
    TRANSISTOR | BJT | NPN | 25V V(BR)CEO | 500MA I(C) | TO-92
    ETC
  • 英文版
    TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 800MA I(C) | TO-92
    ETC
  • 英文版
    TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 800MA I(C) | TO-92
    ETC
  • 英文版
    PNP SILICON GENERAL PURPOSE AMPLIFIERS AND SWITCHES
    MICRO-ELECTRONI...
  • 英文版
    PNP SILICON GENERAL PURPOSE AMPLIFIERS AND SWITCHES
    MICRO-ELECTRONI...
  • 英文版
    Mini size of Discrete semiconductor elements
    ETC

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