Phototransistors
PNZ147
(PN147)
Silicon NPN Phototransistor
Unit : mm
For optical control systems
0.5鹵0.1
Features
High sensitivity
Wide spectral sensitivity, matched to GaAs LEDs
Fast response : t
r
, t
f
= 3
碌s
(typ.)
1.05鹵0.1
Type number : Emitter mark (Green)
10.0 min.
10.0 min.
3.2鹵0.3 3.2鹵0.3
酶1.8
2
1
藲
2.2鹵0.15
(0.7)
0.15
(0.7)
45
1.8
2.8鹵0.2 1.8
Small size designed for easier mounting to printed circuit board
2.8鹵0.2
R0.9
Absolute Maximum Ratings
(Ta = 25藲C)
Parameter
Collector to emitter voltage
Emitter to collector voltage
Collector current
Collector power dissipation
Operating ambient temperature
Storage temperature
Symbol
V
CEO
V
ECO
I
C
P
C
T
opr
T
stg
Ratings
20
5
20
50
鈥?5 to +85
鈥?0 to +100
Unit
V
V
mA
mW
藲C
藲C
0.85
鹵
0.15
1: Collector
2: Emitter
Electro-Optical Characteristics
(Ta = 25藲C)
Parameter
Dark current
Collector photo current
Peak sensitivity wavelength
Acceptance half angle
Response time
Collector saturation voltage
*1
Symbol
I
CEO
I
CE(L)1*3
I
CE(L)2
位
P
胃
t
r
, t
f*2
V
CE(sat)
V
CE
= 10V
Conditions
V
CE
= 10V, L = 2 lx
*1
V
CE
= 10V, L = 500 lx
*1
V
CE
= 10V
Measured from the optical axis to the half power point
V
CC
= 10V, I
CE(L)
= 5mA, R
L
= 100鈩?/div>
I
CE(L)
= 1mA, L = 1000 lx
*1
min
3
typ
0.01
12
3.5
800
24
3
0.2
max
0.5
Unit
碌A
碌A
mA
nm
deg.
10
0.5
碌s
V
Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source.
*2
Switching time measurement circuit
Sig.IN
V
CC
(Input pulse)
Sig.OUT (Output pulse)
90%
10%
t
d
t
r
t
f
t
d
: Delay time
t
r
: Rise time (Time required for the collector photo current to
increase from 10% to 90% of its final value)
t
f
: Fall time (Time required for the collector photo current to
decrease from 90% to 10% of its initial value)
;;
;;
;;
50鈩?/div>
R
L
*3
I
CE(L)
Classifications
Class
I
CE(L)
(碌A)
Q
3.0 to 11.0
R
7.0 to 24.0
S
>16.0
Note) The part number in the parenthesis shows conventional part number.
0.4鹵0.1
1
1
2
3
