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PJD882 Datasheet

  • PJD882

  • NPN Epitaxial Silicon Transistor

  • 3頁

  • ETC

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PJD882/PJD882S
NPN Epitaxial Silicon Transistor
AUDIO FREQ UENCY POWER AMPLIFIER LOW SPEED SWITCHING
鈥?/div>
鈥?/div>
鈥?/div>
Complement to PJB772
PW顎?0ms,Duty Cycle顎?0%Pulse Test
PW顎?50碌 s, Duty Cycle 2%
TO-92
TO-126
ABSOLUTE MAXIMUM RATINGS
(T a = 25
鈩?/div>
)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Bias Voltage
Collector Current (DC)
*Collector Current (Pulse)
Base Current (DC)
Collector Dissipation
(Ta=25鈩?
Collector Dissipation
(Ta=25鈩?
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
C
I
B
P
C
P
C
Tj
Tstg
Rating
40
30
5
3
7
0.6
10
1
150
-55~150
Unit
V
V
V
A
A
A
W
W
鈩?/div>
鈩?/div>
Pin : 1.Emitter
2.Collector
3.Base
ORDERING INFORMATION
Device
PJD882CT
PJD882CK
Operating Temperature
-20鈩冿拷½錕?85鈩?/div>
Package
TO-92
TO-126
ELECTRICAL CHARACTERISTICS(T
a=25
鈩?
Characteristics
Collector Cutoff Current
Emitter Cutoff Current
*DC Current Gain
*Collector Emitter Saturation Voltage
*Base Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
Symbol
I
CBO
I
EBO
h
FE1
h
FE2
V
CE(SAT)
V
BE(SAT)
f
T
Cob
Test condition
V
CB
=30V,I
E
=0
V
EB
=3V,I
C
=0
V
CE
=2V,I
C
=20mA
V
CE
=2V,I
C
=1A
I
C
=2A,I
B
=0.2A
I
C
=2A,I
B
=0.2A
V
CE
=5V,I
C
=0.1A
V
CB
=10V,I
E
=0
f=1MHz
Min
Typ
Min
1
1
Unit
碌A(chǔ)
碌A(chǔ)
30
60
150
160
0.3
1.0
90
45
400
0.5
2.0
V
V
MHz
pF
h
FE
(2) CLASSIFICATION
Classification
h
FE
(2)
R
60-120
O
100-200
Y
160-320
G
200-400
1-3
2002/01.rev.A

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