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PJ13007CZ Datasheet

  • PJ13007CZ

  • NPN Epitaxial Silicon Transistor

  • 2頁

  • ETC

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PJ13007
NPN Epitaxial Silicon Transistor
HIGH VOLTAGE SWITCH MODE APPLICATION
鈥?/div>
High Speed Switching
鈥?/div>
Suitable for Swiching Regulator and Motor Control
TO-220
ABSOLUTE MAXIMUM RATINGS
(Ta= 25
鈩?/div>
)
Characteristic
Collector Base Voltage
Collector Emitter
Voltage
Emitter Base Voltage
Collector Current (DC)
Collector Current
(Pulse)
Base Current
Collector Dissipation
Junction Temperature
Storage Temperature
I
B
Pc
Tj
Tstg
4
80
150
-65 ~150
A
W
鈩?/div>
鈩?/div>
Device
PJ13007CZ
Operating Temperature
-20鈩冿拷½錕?85鈩?/div>
Package
TO-220
V
EBO
Ic
Ic
9
8
16
V
A
A
Symbol
V
CBO
V
CEO
Rating
700
400
Uint
V
V
P in : 1. Base
2. Collector
3. Emitter
ORDERING INFORMATION
ELECTRICAL CHARACTERISTICS(Ta=
25
鈩?/div>
)
Characteristic
*Collector Emitter Sustaining Voltage
Emitter Cutoff Current
*DC Current Gain
*Collector Emitter Saturation Voltage
Symbol
V
CEO
(
SUS
)
I
EBO
h
FE
V
CE
(sat)
Test Condition
Ic = 10mA, I
B
= 0
V
EB
=9V, Ic=0
V
CE
=5V, Ic =2A
V
CE
=5V, Ic =5A
Ic =2A, I
B
=0.4A
Ic =5A, I
B
=1A
Ic =8A, I
B
=2A
*Base Emitter Saturation Voltage
Output Capacitance
Current Gain Bandwidth Product
Turn On Time
Storage Time
Fall Time
Pulse Test: PW鈮?00
渭S,
Duty Cycle
鈮?
%
V
BE
(sat)
C
OB
f
T
t
on
ts
t
f
Ic =2A, I
B
=0.4A
Ic =5A, I
B
=1A
V
CB
=10V, f =0.1MHz
V
CE
=10V, Ic =0.5A
V
CC
=125V, Ic =5A
I
B1
=I
B2
=1A
4
1.6
3
0.7
110
8
5
Min
400
1
60
30
1
2
3
1.2
1.6
V
V
V
V
V
pF
MHz
渭S
渭S
渭S
Typ
Max
Unit
V
mA
1-2
2002/01.rev.A

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