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PDTD123EK Datasheet

  • PDTD123EK

  • NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 kW,...

  • 10頁

  • PHILIPS

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PDTD123E series
NPN 500 mA, 50 V resistor-equipped transistors;
R1 = 2.2 k鈩? R2 = 2.2 k鈩?/div>
Rev. 01 鈥?8 April 2005
Product data sheet
1. Product pro鏗乴e
1.1 General description
500 mA NPN Resistor-Equipped Transistors (RET) family.
Table 1:
Product overview
Package
Philips
PDTD123EK
PDTD123ES
[1]
PDTD123ET
[1]
Type number
PNP complement
JEITA
SC-59A
SC-43A
-
JEDEC
TO-236
TO-92
TO-236AB
PDTB123EK
PDTB123ES
PDTB123ET
SOT346
SOT54
SOT23
Also available in SOT54A and SOT54 variant packages (see
Section 2).
1.2 Features
s
Built-in bias resistors
s
Simpli鏗乪s circuit design
s
500 mA output current capability
s
Reduces component count
s
Reduces pick and place costs
s
鹵10
% resistor ratio tolerance
1.3 Applications
s
Digital application in automotive and
industrial segments
s
Controlling IC inputs
s
Cost saving alternative for BC817 series
in digital applications
s
Switching loads
1.4 Quick reference data
Table 2:
Symbol
V
CEO
I
O
R1
R2/R1
Quick reference data
Parameter
collector-emitter voltage
output current (DC)
bias resistor 1 (input)
bias resistor ratio
Conditions
open base
Min
-
-
1.54
0.9
Typ
-
-
2.2
1.0
Max
50
500
2.86
1.1
Unit
V
mA
k鈩?/div>

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